UMG1NTR

Rohm Semiconductor UMG1NTR

Part Number:
UMG1NTR
Manufacturer:
Rohm Semiconductor
Ventron No:
2461536-UMG1NTR
Description:
TRANS 2NPN PREBIAS 0.3W UMT5
ECAD Model:
Datasheet:
UMG1NTR

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Specifications
Rohm Semiconductor UMG1NTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMG1NTR.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Number of Pins
    5
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    30mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MG1
  • Pin Count
    5
  • Number of Elements
    2
  • Polarity
    NPN
  • Configuration
    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    56
  • Resistor - Base (R1)
    22k Ω
  • Resistor - Emitter Base (R2)
    22k Ω
  • VCEsat-Max
    0.3 V
  • Height
    900μm
  • Length
    2.1mm
  • Width
    1.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMG1NTR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMG1NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMG1NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMG1NTR More Descriptions
Trans Digital BJT NPN 50V 100mA 150mW 5-Pin UMT T/R
ROHM,UMG1NTR,Dual NPN Digi Transistor,100 mA 50V 22 kOhm,Ratio Of 1,5-Pin SC-88A | ROHM Semiconductor UMG1NTR
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-353; No. of Pins: 5 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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