STMicroelectronics TIP35CW
- Part Number:
- TIP35CW
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2463318-TIP35CW
- Description:
- TRANS NPN 100V 25A TO-247
- ECAD Model:
-
- Datasheet:
- TIP35CW
STMicroelectronics TIP35CW technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP35CW.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN/TIN SILVER COPPER
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation125W
- Peak Reflow Temperature (Cel)245
- Current Rating25A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP35
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation125W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP35CW Overview
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 5A, 25A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (25A).3MHz is present in the transition frequency.Maximum collector currents can be below 25A volts.
TIP35CW Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP35CW Applications
There are a lot of STMicroelectronics
TIP35CW applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 5A, 25A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (25A).3MHz is present in the transition frequency.Maximum collector currents can be below 25A volts.
TIP35CW Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP35CW Applications
There are a lot of STMicroelectronics
TIP35CW applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP35CW More Descriptions
Transistor GP BJT NPN/PNP 100V 25A 3-Pin (3 Tab) TO-247 Tube
TIP35CW Series NPN 100 V 25 A Complementary Silicon High Power Transistor-TO-247
100V 125W 25A 10@15A4V 3MHz 4V@25A5A NPN 150¡Í@(Tj) TO-247 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistor Array, Npn, 100V, 25A, To-247; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:125W; Dc Collector Current:25A; Dc Current Gain Hfe:25Hfe; Transistor Caserohs Compliant: Yes |Stmicroelectronics TIP35CW
TIP35CW Series NPN 100 V 25 A Complementary Silicon High Power Transistor-TO-247
100V 125W 25A 10@15A4V 3MHz 4V@25A5A NPN 150¡Í@(Tj) TO-247 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistor Array, Npn, 100V, 25A, To-247; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:3Mhz; Power Dissipation Pd:125W; Dc Collector Current:25A; Dc Current Gain Hfe:25Hfe; Transistor Caserohs Compliant: Yes |Stmicroelectronics TIP35CW
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