STMicroelectronics STV160NF03LT4
- Part Number:
- STV160NF03LT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483971-STV160NF03LT4
- Description:
- MOSFET N-CH 30V 160A POWERSO-10
- Datasheet:
- STV160NF03L
STMicroelectronics STV160NF03LT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STV160NF03LT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerSO-10 Exposed Bottom Pad
- Number of Pins12
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingCut Tape (CT)
- SeriesSTripFET™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations10
- ECCN CodeEAR99
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating160A
- Base Part NumberSTV160
- Pin Count10
- JESD-30 CodeR-PDSO-G10
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max210W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation210W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.8m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C160A Tc
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Rise Time380ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±15V
- Fall Time (Typ)170 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)160A
- Gate to Source Voltage (Vgs)15V
- Drain-source On Resistance-Max0.0038Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)640A
- Avalanche Energy Rating (Eas)1000 mJ
- RoHS StatusROHS3 Compliant
STV160NF03LT4 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 640A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STV160NF03LT4 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 640A.
STV160NF03LT4 Applications
There are a lot of STMicroelectronics
STV160NF03LT4 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 640A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STV160NF03LT4 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 640A.
STV160NF03LT4 Applications
There are a lot of STMicroelectronics
STV160NF03LT4 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STV160NF03LT4 More Descriptions
N-Channel 40V - 0.0019 Ohm - 160A - PowerSO-10(TM) StripFETMOSFET
Power MOSFET Transistors N-Ch 30 Volt 160 Amp
Power Field-Effect Transistor, 160A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 160A POWERSO-10
IC DAC 16BIT V-OUT LOW-PWR 8SOIC
French Electronic Distributor since 1988
Power MOSFET Transistors N-Ch 30 Volt 160 Amp
Power Field-Effect Transistor, 160A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 160A POWERSO-10
IC DAC 16BIT V-OUT LOW-PWR 8SOIC
French Electronic Distributor since 1988
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