ST STP11NM60FDFP

Part Number:: STP11NM60FDFP

Manufacturer:: ST

Ventron No:: 6355658-STP11NM60FDFP

Description:: ORIGINAL IN STOCK

ECAD Model:

Datasheet:: STP11NM60FDFP

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy STP11NM60FDFP.

STP11NM60FDFP More Descriptions

N-Channel 600V - 0.4Ohm - 11A FDmesh(TM) POWER MOSFET (with FAST DIODE)
N-Channel 600 V 0.45 Ohm MDmesh Power MosFet - TO-220FP
Mosfet Transistor, N Channel, 11 A, 600 V, 450 Mohm, 10 V, 4 V |Stmicroelectronics STP11NM60FDFP
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: -; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 350mJ; Capacitance Ciss Typ: 900pF; Current Iar: 5.5A; Current Id Max: 11A; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -65°C; Junction to Case Thermal Resistance A: 3.57°C/W; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V

Product Comparison

The three parts on the right have similar specifications to STP11NM60FDFP.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

Manufacturer Standard Lead Time:

View Compare
STP11NM60FDFP

ST

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

ST/

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220AB

MESH OVERLAY™

280 mOhm @ 8A, 10V

140W (Tc)

Tube

TO-220-3

497-3183-5

-65°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

1270pF @ 25V

83nC @ 10V

N-Channel

-

10V

250V

N-Channel 250V 16A (Tc) 140W (Tc) Through Hole TO-220AB

16A (Tc)

-

STP11NM60FDFP vs STP16NS25
STP10NM50N

ST

4V @ 250µA

±25V

MOSFET (Metal Oxide)

TO-220

MDmesh™ II

630 mOhm @ 3.5A, 10V

70W (Tc)

Tube

TO-220-3

497-10770-5

-55°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

450pF @ 50V

17nC @ 10V

N-Channel

-

10V

500V

N-Channel 500V 7A (Tc) 70W (Tc) Through Hole TO-220

7A (Tc)

-

STP11NM60FDFP vs STP10NM50N
STP13NK60Z

ST

4.5V @ 100µA

±30V

MOSFET (Metal Oxide)

TO-220AB

SuperMESH™

550 mOhm @ 4.5A, 10V

150W (Tc)

Tube

TO-220-3

497-3182-5

-55°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

2030pF @ 25V

92nC @ 10V

N-Channel

-

10V

600V

N-Channel 600V 13A (Tc) 150W (Tc) Through Hole TO-220AB

13A (Tc)

38 Weeks

STP11NM60FDFP vs STP13NK60Z