STMicroel STP11NM80

Name: STP11NM80
Brand: STMicroel
SKU: 6046962-STP11NM80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP11NM80

Manufacturer:: STMicroel

Ventron No:: 6046962-STP11NM80

Description:

ECAD Model:

Datasheet:: STP11NM80

Specifications

STMicroel STP11NM80 technical specifications, attributes, parameters and parts with similar specifications to STMicroel STP11NM80.

Vgs(th) (Max) @ Id:
5V @ 250µA
Vgs (Max):
±30V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-220AB
Series:
MDmesh™
Rds On (Max) @ Id, Vgs:
400 mOhm @ 5.5A, 10V
Power Dissipation (Max):
150W (Tc)
Packaging:
Tube
Package / Case:
TO-220-3
Other Names:
497-4369-5
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Manufacturer Standard Lead Time:
42 Weeks
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:
1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
43.6nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800V
Detailed Description:
N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy STP11NM80.

STP11NM80 More Descriptions

N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220
Trans MOSFET N-CH 800V 11A 3-Pin(3 Tab) TO-220AB Tube
MOSFET N-Channel 800V 11A MDMESH TO220
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W Rohs Compliant: Yes |Stmicroelectronics STP11NM80
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP11NM80.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Manufacturer Standard Lead Time:

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
STP11NM80

STMicroel

5V @ 250µA

±30V

MOSFET (Metal Oxide)

TO-220AB

MDmesh™

400 mOhm @ 5.5A, 10V

150W (Tc)

Tube

TO-220-3

497-4369-5

-65°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

42 Weeks

Lead free / RoHS Compliant

1630pF @ 25V

43.6nC @ 10V

N-Channel

-

10V

800V

N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220AB

11A (Tc)

-
STP16NS25

ST/

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220AB

MESH OVERLAY™

280 mOhm @ 8A, 10V

140W (Tc)

Tube

TO-220-3

497-3183-5

-65°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

-

Lead free / RoHS Compliant

1270pF @ 25V

83nC @ 10V

N-Channel

-

10V

250V

N-Channel 250V 16A (Tc) 140W (Tc) Through Hole TO-220AB

16A (Tc)

STP11NM80 vs STP16NS25
STP10NM50N

ST

4V @ 250µA

±25V

MOSFET (Metal Oxide)

TO-220

MDmesh™ II

630 mOhm @ 3.5A, 10V

70W (Tc)

Tube

TO-220-3

497-10770-5

-55°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

-

Lead free / RoHS Compliant

450pF @ 50V

17nC @ 10V

N-Channel

-

10V

500V

N-Channel 500V 7A (Tc) 70W (Tc) Through Hole TO-220

7A (Tc)

STP11NM80 vs STP10NM50N
STP13NK60Z

ST

4.5V @ 100µA

±30V

MOSFET (Metal Oxide)

TO-220AB

SuperMESH™

550 mOhm @ 4.5A, 10V

150W (Tc)

Tube

TO-220-3

497-3182-5

-55°C ~ 150°C (TJ)

Through Hole

1 (Unlimited)

38 Weeks

Lead free / RoHS Compliant

2030pF @ 25V

92nC @ 10V

N-Channel

-

10V

600V

N-Channel 600V 13A (Tc) 150W (Tc) Through Hole TO-220AB

13A (Tc)

STP11NM80 vs STP13NK60Z