STMicroelectronics STF10NM60N

Name: STF10NM60N
Brand: STMicroelectronics
SKU: 2483016-STF10NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STF10NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 2483016-STF10NM60N

Description:: MOSFET N-CH 600V 10A TO-220FP

ECAD Model:

Datasheet:: STF10NM60N

Specifications

STMicroelectronics STF10NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF10NM60N.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF10N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.55Ohm
DS Breakdown Voltage-Min
600V
Avalanche Energy Rating (Eas)
200 mJ
Height
16.4mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STF10NM60N Description
STF10NM60N is an N-channel Power MOSFET designed with MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charge in the world. As a result, it is well suited to the most demanding high efficiency converters.

STF10NM60N Features
?Avalanche-proofed to the nth degree
? Low gate charge and input capacitance
? Input gate resistance is low

STF10NM60N Applications
Switching applications

STF10NM60N More Descriptions

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220FP package
Power MOSFET, N Channel, 600 V, 10 A, 550 Milliohms, TO-220FP, 3 Pins, Through Hole
Trans MOSFET N-CH 600V 10A 3-Pin(3 Tab) TO-220FP Tube
N-Channel 600 V 0.55 Ohm 19 nC Through Hole MDmesh II Power Mosfet - I2PAK
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to STF10NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Diode Configuration

Pbfree Code

Resistance

Terminal Finish

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

View Compare
STF10NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STF10N

3

1

25W Tc

Single

ENHANCEMENT MODE

25W

ISOLATED

10 ns

N-Channel

SWITCHING

550m Ω @ 4A, 10V

4V @ 250μA

540pF @ 50V

10A Tc

19nC @ 10V

12ns

600V

10V

±25V

15 ns

32 ns

10A

3V

TO-220AB

25V

8A

0.55Ohm

600V

200 mJ

16.4mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STF15100C

SMC Diode Solutions

-

6 Weeks

-

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

-

-

-

Tube

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

2013

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

180μA @ 100V

750mV @ 7.5A

-55°C~150°C

100V

1 Pair Common Cathode

-

-

-

-

-

-

-

-

-

-

STF10NM60N vs STF15100C
STF19NM65N

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

-

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

-

FET General Purpose Power

MOSFET (Metal Oxide)

STF19

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

-

N-Channel

SWITCHING

270m Ω @ 7.75A, 10V

4V @ 250μA

1900pF @ 50V

15.5A Tc

55nC @ 10V

8ns

-

10V

±25V

26 ns

80 ns

15.5A

-

TO-220AB

25V

-

-

-

400 mJ

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

yes

250mOhm

Matte Tin (Sn) - annealed

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

650V

62A

STF10NM60N vs STF19NM65N
STF10LN80K5

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

17 Weeks

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-55°C~150°C TJ

Tube

MDmesh™

-

Active

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

STF10LN

-

-

25W Tc

-

-

-

-

-

N-Channel

-

630m Ω @ 4A, 10V

5V @ 100μA

427pF @ 100V

8A Tc

15nC @ 10V

-

800V

10V

±30V

-

-

8A

4V

-

-

-

-

-

-

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

-

STF10NM60N vs STF10LN80K5