STMicroelectronics STD4N80K5

Name: STD4N80K5
Brand: STMicroelectronics
SKU: 3554183-STD4N80K5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD4N80K5

Manufacturer:: STMicroelectronics

Ventron No:: 3554183-STD4N80K5

Description:: MOSFET N-CH 800V 3A DPAK

ECAD Model:

Datasheet:: STD4N80K5

Specifications

STMicroelectronics STD4N80K5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD4N80K5.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
17 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SuperMESH5™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
2.5Ohm
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STD4N
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Case Connection
DRAIN
Turn On Delay Time
16.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
175pF @ 100V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
21 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
3A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
800V
Avalanche Energy Rating (Eas)
74.5 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD4N80K5 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STD4N80K5 Features Industry’s lowest RDS(on) x area Industry’s best figure of merit (FOM) Ultra-low gate charge 100% avalanche tested Zener-protected
STD4N80K5 Applications Switching applications

STD4N80K5 More Descriptions

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package
N-channel 800 V 3 A 2.5 Ohm Surface Mount Power MOSFET - TO-252-3
MOSFET, N-CH, 800V, 3A, 150DEG C, 60W; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Certification