STMicroelectronics STB200NF04L-1
- Part Number:
- STB200NF04L-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488044-STB200NF04L-1
- Description:
- MOSFET N-CH 40V 120A I2PAK
- Datasheet:
- ST(B,P)200NF04(-1)
STMicroelectronics STB200NF04L-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB200NF04L-1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTB200N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Turn On Delay Time37 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.8m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs90nC @ 4.5V
- Rise Time270ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)80 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)120A
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)480A
- Avalanche Energy Rating (Eas)1400 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STB200NF04L-1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1400 mJ.A device's maximal input capacitance is 6400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 90 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 480A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 37 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STB200NF04L-1 Features
the avalanche energy rating (Eas) is 1400 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 480A.
STB200NF04L-1 Applications
There are a lot of STMicroelectronics
STB200NF04L-1 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1400 mJ.A device's maximal input capacitance is 6400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 90 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 480A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 37 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STB200NF04L-1 Features
the avalanche energy rating (Eas) is 1400 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 480A.
STB200NF04L-1 Applications
There are a lot of STMicroelectronics
STB200NF04L-1 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STB200NF04L-1 More Descriptions
Trans MOSFET N-CH 40V 120A 3-Pin(3 Tab) I2PAK Tube
Power Field-Effect Transistor, 120A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
TDK - CGA5L4X7T2W104K160AA - Keramikvielschichtkondensator, SMD, 0.1 µF, 450 V, 1206 [Metrisch 3216], ± 10%, X7T, Baureihe CGA
Power Field-Effect Transistor, 120A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
TDK - CGA5L4X7T2W104K160AA - Keramikvielschichtkondensator, SMD, 0.1 µF, 450 V, 1206 [Metrisch 3216], ± 10%, X7T, Baureihe CGA
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