Microchip Technology SST26WF040BAT-104I/MF
- Part Number:
- SST26WF040BAT-104I/MF
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3231422-SST26WF040BAT-104I/MF
- Description:
- IC FLASH 4MBIT 104MHZ 8WDFN
- ECAD Model:
-
- Datasheet:
- SST26WF040BAT-104I/MF
Microchip Technology SST26WF040BAT-104I/MF technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology SST26WF040BAT-104I/MF.
- Factory Lead Time7 Weeks
- Mounting TypeSurface Mount
- Package / Case8-WDFN Exposed Pad
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2014
- SeriesSST26 SQI®
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- Terminal FinishMatte Tin (Sn) - annealed
- TechnologyCMOS
- Voltage - Supply1.65V~1.95V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)30
- Base Part NumberSST26WF040
- JESD-30 CodeR-PDSO-N8
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.65V
- InterfaceSPI
- Memory Size4Mb 512K x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency104MHz
- Memory FormatFLASH
- Memory InterfaceSPI - Quad I/O
- Organization4MX1
- Memory Width1
- Write Cycle Time - Word, Page1.5ms
- Memory Density4194304 bit
- Screening LevelTS 16949
- Parallel/SerialSERIAL
- Programming Voltage1.8V
- Height Seated (Max)0.8mm
- Length6mm
- Width5mm
- RoHS StatusROHS3 Compliant
SST26WF040BAT-104I/MF Overview
This product is packaged in an 8-WDFN exposed pad case, making it suitable for surface mount applications. It is supplied in tape and reel packaging, with a JESD-609 code of e3. The terminal position is dual, providing flexibility in circuit design. The supply voltage for this product is 1.8V, with a JESD-30 code of R-PDSO-N8. This product is a non-volatile memory type, specifically a FLASH memory format. It operates in a serial mode, making it ideal for applications requiring high-speed data transfer. With its compact size and versatile features, this product is well-suited for a wide range of electronic devices.
SST26WF040BAT-104I/MF Features
Package / Case: 8-WDFN Exposed Pad
SST26WF040BAT-104I/MF Applications
There are a lot of Microchip Technology SST26WF040BAT-104I/MF Memory applications.
personal digital assistants
supercomputers
eDRAM
DVD disk buffer
cell phones
eSRAM
personal computers
main computer memory
networking
embedded logic
This product is packaged in an 8-WDFN exposed pad case, making it suitable for surface mount applications. It is supplied in tape and reel packaging, with a JESD-609 code of e3. The terminal position is dual, providing flexibility in circuit design. The supply voltage for this product is 1.8V, with a JESD-30 code of R-PDSO-N8. This product is a non-volatile memory type, specifically a FLASH memory format. It operates in a serial mode, making it ideal for applications requiring high-speed data transfer. With its compact size and versatile features, this product is well-suited for a wide range of electronic devices.
SST26WF040BAT-104I/MF Features
Package / Case: 8-WDFN Exposed Pad
SST26WF040BAT-104I/MF Applications
There are a lot of Microchip Technology SST26WF040BAT-104I/MF Memory applications.
personal digital assistants
supercomputers
eDRAM
DVD disk buffer
cell phones
eSRAM
personal computers
main computer memory
networking
embedded logic
SST26WF040BAT-104I/MF More Descriptions
Serial Flash, 1.65 - 1.95 V, 4 Mbit, 104 MHz, -40°C to 85°C, TDFN-S-8, RoHSMicrochip SCT
NOR Flash Serial-SPI 1.8V 4Mbit 4M/2M/1M X 1bit/2bit/4bit 8ns 8-Pin WDFN T/R
4Mb 1.8V Sqi Flash Memory 8 Tdfn-S 6X5X0.8Mm T/R Rohs Compliant: Yes |Microchip SST26WF040BAT-104I/MF
NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN
FLASH MEMORY, 4MBIT, -40 TO 85DEG C;
TDFN-S-8 Pre-ordered MCUs ROHS
NOR Flash Serial-SPI 1.8V 4Mbit 4M/2M/1M X 1bit/2bit/4bit 8ns 8-Pin WDFN T/R
4Mb 1.8V Sqi Flash Memory 8 Tdfn-S 6X5X0.8Mm T/R Rohs Compliant: Yes |Microchip SST26WF040BAT-104I/MF
NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN
FLASH MEMORY, 4MBIT, -40 TO 85DEG C;
TDFN-S-8 Pre-ordered MCUs ROHS
The three parts on the right have similar specifications to SST26WF040BAT-104I/MF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)InterfaceMemory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityScreening LevelParallel/SerialProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusReach Compliance CodeSupply Current-MaxStandby Current-MaxSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionReverse PinoutView Compare
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SST26WF040BAT-104I/MF7 WeeksSurface Mount8-WDFN Exposed PadYES-40°C~85°C TATape & Reel (TR)2014SST26 SQI®e3Active3 (168 Hours)8Matte Tin (Sn) - annealedCMOS1.65V~1.95VDUAL26011.8V1.27mm30SST26WF040R-PDSO-N81.95V1.65VSPI4Mb 512K x 8Non-VolatileSYNCHRONOUS104MHzFLASHSPI - Quad I/O4MX111.5ms4194304 bitTS 16949SERIAL1.8V0.8mm6mm5mmROHS3 Compliant--------- -
7 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~125°C TATape & Reel (TR)-SST25-Active3 (168 Hours)8-CMOS1.65V~1.95VDUAL-11.8V1.27mm--R-PDSO-G81.95V1.65V-8Mb 1M x 8Non-VolatileSYNCHRONOUS80MHzFLASHSPI8MX111ms8388608 bitAEC-Q100; TS 16949SERIAL1.8V1.75mm4.9mm3.9mm-compliant-------
-
7 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~125°C TATube-SST25-Active3 (168 Hours)8-CMOS1.65V~1.95VDUAL-11.8V1.27mm--R-PDSO-G81.95V1.65V-8Mb 1M x 8Non-VolatileSYNCHRONOUS80MHzFLASHSPI8MX111ms8388608 bitAEC-Q100; TS 16949SERIAL1.8V1.75mm4.9mm3.9mm-compliant-------
-
7 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~125°C TATube-Automotive, AEC-Q100, SST25-Active3 (168 Hours)8-CMOS2.3V~3.6VDUAL-13.3V1.27mm--R-PDSO-G83.6V2.3V-4Mb 512K x 8Non-VolatileSYNCHRONOUS40MHzFLASHSPI4MX115ms4194304 bit-SERIAL3.3V1.75mm4.9mm3.9mmRoHS Compliantcompliant0.015mA0.00001ASPI100000 Write/Erase Cycles20HARDWARE/SOFTWARENO
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Surface Mount SST25 Memory IC SST25 Series SST25PF080B 8 b kb 5mm mm 30mA mA
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Automotive, AEC-Q100, SST25 Memory IC Automotive, AEC-Q100, SST25 Series 4.9mm mm
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Automotive, AEC-Q100, SST26 SQI® Memory IC Automotive, AEC-Q100, SST26 SQI® Series 4.9mm mm
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