Vishay Siliconix SI3458BDV-T1-GE3
- Part Number:
- SI3458BDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848472-SI3458BDV-T1-GE3
- Description:
- MOSFET N-CH 60V 4.1A 6-TSOP
- Datasheet:
- SI3458BDV-T1-GE3
Vishay Siliconix SI3458BDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3458BDV-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance100mOhm
- Terminal FinishPure Matte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta 3.3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 30V
- Current - Continuous Drain (Id) @ 25°C4.1A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)3.2A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Nominal Vgs3 V
- Height1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3458BDV-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI3458BDV-T1-GE3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns
a threshold voltage of 3V
SI3458BDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3458BDV-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI3458BDV-T1-GE3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns
a threshold voltage of 3V
SI3458BDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3458BDV-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SI3458BDV-T1-GE3 More Descriptions
N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
N Ch Mosfet, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W Rohs Compliant: No |Vishay SI3458BDV-T1-GE3.
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
N Ch Mosfet, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W Rohs Compliant: No |Vishay SI3458BDV-T1-GE3.
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