SBC846BPDW1T2G

ON Semiconductor SBC846BPDW1T2G

Part Number:
SBC846BPDW1T2G
Manufacturer:
ON Semiconductor
Ventron No:
3068342-SBC846BPDW1T2G
Description:
TRANS NPN/PNP 65V 0.1A SOT363
ECAD Model:
Datasheet:
SBC846BPDW1T2G

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Specifications
ON Semiconductor SBC846BPDW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC846BPDW1T2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    380mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    BC846BP
  • Pin Count
    6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Power - Max
    380mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Polarity/Channel Type
    NPN AND PNP
  • Transistor Type
    NPN, PNP
  • Collector Emitter Voltage (VCEO)
    600mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    65V
  • Frequency - Transition
    100MHz
  • Collector Base Voltage (VCBO)
    80V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SBC846BPDW1T2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SBC846BPDW1T2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SBC846BPDW1T2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SBC846BPDW1T2G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R
Trans GP BJT NPN/PNP 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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