Toshiba Semiconductor and Storage RN4982FE,LF(CB

Name: RN4982FE,LF(CB
Brand: Toshiba Semiconductor and Storage
SKU: 2461431-RN4982FE,LF(CB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN4982FE,LF(CB

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 2461431-RN4982FE,LF(CB

Description:: TRANS NPN/PNP PREBIAS 0.1W ES6

ECAD Model:

Datasheet:: RN4982FE,LF(CB

Specifications

Toshiba Semiconductor and Storage RN4982FE,LF(CB technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4982FE,LF(CB.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Power Dissipation-Max
100mW
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
RoHS Status
RoHS Compliant

Description

RN4982FE,LF(CB Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4982FE,LF(CB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4982FE,LF(CB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RN4982FE,LF(CB More Descriptions

TRANS NPN/PNP PREBIAS 0.1W ES6

Product Comparison

The three parts on the right have similar specifications to RN4982FE,LF(CB.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Packaging

Published

Part Status

Power Dissipation-Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Frequency - Transition

RoHS Status

Mounting Type

Package / Case

Number of Pins

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Polarity

Number of Channels

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
RN4982FE,LF(CB

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Tape & Reel (TR)

2014

Active

100mW

300mV

100mA

50V

50V

250MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RN4906,LF

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Cut Tape (CT)

2014

Discontinued

-

50V

100mA

50V

50V

200MHz

RoHS Compliant

Surface Mount

6-TSSOP, SC-88, SOT-363

6

1 (Unlimited)

150°C

-55°C

200mW

NPN, PNP

2

1 NPN, 1 PNP - Pre-Biased (Dual)

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

5V

80

4.7k Ω

100mA

47k Ω

900μm

2mm

1.25mm

-

-

-

RN4982FE,LF(CB vs RN4906,LF
RN4984FE,LF(CB

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Tape & Reel (TR)

2014

-

100mW

300mV

100mA

50V

50V

250MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RN4982FE,LF(CB vs RN4984FE,LF(CB
RN49A1(T5L,F,T)

Toshiba Semiconductor and Storage

-

-

Tape & Reel (TR)

2014

Obsolete

-

-

-

-

-

200MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

1 (Unlimited)

-

-

-

-

-

1 NPN, 1 PNP - Pre-Biased (Dual)

80 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

-

-

-

2.2k Ω

-

47k Ω

-

-

-

200mW

50V

100mA

RN4982FE,LF(CB vs RN49A1(T5L,F,T)