Toshiba Semiconductor and Storage RN4982,LF(CT
- Part Number:
- RN4982,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3068418-RN4982,LF(CT
- Description:
- TRANS NPN/PNP PREBIAS 0.2W US6
- ECAD Model:
-
- Datasheet:
- RN4982,LF(CT
Toshiba Semiconductor and Storage RN4982,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4982,LF(CT.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Weight6.010099mg
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- JESD-30 CodeR-PDSO-G6
- Number of Elements2
- PolarityNPN, PNP
- Number of Channels2
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 5V
- Current - Collector Cutoff (Max)100μA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz 200MHz
- Emitter Base Voltage (VEBO)-10V
- hFE Min50
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusRoHS Compliant
RN4982,LF(CT Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4982,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4982,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4982,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4982,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN4982,LF(CT More Descriptions
Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R
TRANS NPN/PNP PREBIAS 0.2W US6
IC GATE NAND 4CH 2-INP 14TSSOP
TRANS NPN/PNP PREBIAS 0.2W US6
IC GATE NAND 4CH 2-INP 14TSSOP
The three parts on the right have similar specifications to RN4982,LF(CT.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureMax Power DissipationTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsPolarityNumber of ChannelsPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-MaxView Compare
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RN4982,LF(CT12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636.010099mgSILICONCut Tape (CT)2014yesActive1 (Unlimited)6BUILT IN BIAS RESISTANCE RATIO IS 1200mWGULL WINGunknownR-PDSO-G62NPN, PNP2200mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V100μA ICBO300mV @ 250μA, 5mA50V250MHz50V250MHz 200MHz-10V5010k Ω-100mA10k ΩRoHS Compliant---- -
--Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2014-Obsolete1 (Unlimited)---------200mW-1 NPN, 1 PNP - Pre-Biased (Dual)--80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA---200MHz--2.2k Ω-47k Ω-50V100mA-
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-363--Cut Tape (CT)2014yesDiscontinued1 (Unlimited)--200mW-unknown----200mW-1 NPN, 1 PNP - Pre-Biased (Dual)300mV100mA30 @ 10mA 5V100μA ICBO300mV @ 250μA, 5mA50V-50V250MHz 200MHz--4.7k Ω-4.7k ΩRoHS Compliant---
-
16 WeeksSurface Mount-----2014-Active-------------300mV100mA---50V-50V200MHz-----RoHS Compliant--100mW
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