Toshiba Semiconductor and Storage RN2711(TE85L,F)
- Part Number:
- RN2711(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3584821-RN2711(TE85L,F)
- Description:
- TRANS 2PNP PREBIAS 0.2W USV
- ECAD Model:
-
- Datasheet:
- RN2711(TE85L,F)
Toshiba Semiconductor and Storage RN2711(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2711(TE85L,F).
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case5-TSSOP, SC-70-5, SOT-353
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation200mW
- Reach Compliance Codeunknown
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power - Max200mW
- Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-100mA
- RoHS StatusRoHS Compliant
RN2711(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2711(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2711(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2711(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2711(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2711(TE85L,F) More Descriptions
Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO
Bias Resistor Built-in Transistor (BRT) 2 in 1,-50V,-100mA,P
TRANS 2PNP PREBIAS 0.2W USV
Bias Resistor Built-in Transistor (BRT) 2 in 1,-50V,-100mA,P
TRANS 2PNP PREBIAS 0.2W USV
The three parts on the right have similar specifications to RN2711(TE85L,F).
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationReach Compliance CodeNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentRoHS StatusPolarity/Channel TypeResistor - Emitter Base (R2)View Compare
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RN2711(TE85L,F)12 WeeksSurface MountSurface Mount5-TSSOP, SC-70-5, SOT-353SILICONCut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signal200mWunknown2PNPDual200mW2 PNP - Pre-Biased (Dual) (Emitter Coupled)300mV100mA400 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz-5V12010k Ω-100mARoHS Compliant--- -
12 WeeksSurface MountSurface MountSOT-553SILICONTape & Reel (TR)2014Active1 (Unlimited)BIP General Purpose Small Signal100mW-2--100mW2 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz--2.2k Ω-RoHS CompliantPNP47k Ω
-
12 WeeksSurface MountSurface MountSOT-553SILICONTape & Reel (TR)2014Active1 (Unlimited)BIP General Purpose Small Signal100mWunknown2--100mW2 PNP - Pre-Biased (Dual) (Emitter Coupled)300mV100mA120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz--4.7k Ω-RoHS CompliantPNP-
-
12 WeeksSurface MountSurface MountSOT-553SILICONTape & Reel (TR)2014Active1 (Unlimited)BIP General Purpose Small Signal100mWunknown2--100mW2 PNP - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V200MHz--22k Ω-RoHS CompliantPNP47k Ω
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