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RN2607(TE85L,F)

Toshiba Semiconductor and Storage RN2607(TE85L,F)

Part Number:
RN2607(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
2844597-RN2607(TE85L,F)
Description:
TRANS 2PNP PREBIAS 0.3W SM6
ECAD Model:
Datasheet:
RN2607(TE85L,F)

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Specifications
Toshiba Semiconductor and Storage RN2607(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2607(TE85L,F).
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    300mW
  • Number of Elements
    2
  • Power - Max
    300mW
  • Polarity/Channel Type
    PNP
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    200MHz
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • RoHS Status
    RoHS Compliant
Description
RN2607(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2607(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2607(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2607(TE85L,F) More Descriptions
TRANS 2PNP PREBIAS 0.3W SM6
Product Comparison
The three parts on the right have similar specifications to RN2607(TE85L,F).
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Subcategory
    Max Power Dissipation
    Number of Elements
    Power - Max
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    RoHS Status
    Number of Pins
    Supplier Device Package
    Polarity
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • RN2607(TE85L,F)
    RN2607(TE85L,F)
    Toshiba Semiconductor and Storage
    12 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    SILICON
    Tape & Reel (TR)
    2014
    Active
    1 (Unlimited)
    BIP General Purpose Small Signal
    300mW
    2
    300mW
    PNP
    2 PNP - Pre-Biased (Dual)
    300mV
    100mA
    80 @ 10mA 5V
    100nA ICBO
    300mV @ 250μA, 5mA
    50V
    50V
    200MHz
    10k Ω
    47k Ω
    RoHS Compliant
    -
    -
    -
    -
    -
    -
  • RN2605(TE85L,F)
    RN2605(TE85L,F)
    Toshiba Semiconductor and Storage
    12 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    -
    Tape & Reel (TR)
    2001
    Active
    1 (Unlimited)
    -
    300mW
    -
    300mW
    -
    2 PNP - Pre-Biased (Dual)
    300mV
    100mA
    80 @ 10mA 5V
    100nA ICBO
    300mV @ 250μA, 5mA
    50V
    50V
    200MHz
    2.2kOhms
    47kOhms
    RoHS Compliant
    6
    SM6
    PNP
    50V
    100mA
    RN2607(TE85L,F) vs RN2605(TE85L,F)
  • RN2601(TE85L,F)
    RN2601(TE85L,F)
    Toshiba Semiconductor and Storage
    12 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    -
    Tape & Reel (TR)
    2001
    Active
    1 (Unlimited)
    -
    300mW
    -
    300mW
    -
    2 PNP - Pre-Biased (Dual)
    300mV
    100mA
    30 @ 10mA 5V
    100nA ICBO
    300mV @ 250μA, 5mA
    50V
    50V
    200MHz
    4.7k Ω
    4.7k Ω
    RoHS Compliant
    -
    -
    -
    -
    -
    RN2607(TE85L,F) vs RN2601(TE85L,F)
  • RN2602(TE85L,F)
    RN2602(TE85L,F)
    Toshiba Semiconductor and Storage
    12 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    -
    Tape & Reel (TR)
    2001
    Active
    1 (Unlimited)
    -
    300mW
    -
    300mW
    -
    2 PNP - Pre-Biased (Dual)
    300mV
    100mA
    50 @ 10mA 5V
    100nA ICBO
    300mV @ 250μA, 5mA
    50V
    50V
    200MHz
    10k Ω
    10k Ω
    RoHS Compliant
    -
    -
    -
    -
    -
    RN2607(TE85L,F) vs RN2602(TE85L,F)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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