Nexperia USA Inc. PZTA44,115
- Part Number:
- PZTA44,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068953-PZTA44,115
- Description:
- TRANS NPN 400V 0.3A SOT223
- Datasheet:
- PZTA44,115
Nexperia USA Inc. PZTA44,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PZTA44,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberPZTA44
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1.35W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic750mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)400V
- Current - Collector (Ic) (Max)300mA
- Transition Frequency20MHz
- Frequency - Transition20MHz
- VCEsat-Max0.75 V
- Collector-Base Capacitance-Max7pF
- Height4.8mm
- RoHS StatusROHS3 Compliant
PZTA44,115 Overview
DC current gain in this device equals 50 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 5mA, 50mA.As a result, the part has a transition frequency of 20MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PZTA44,115 Features
the DC current gain for this device is 50 @ 10mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
a transition frequency of 20MHz
PZTA44,115 Applications
There are a lot of Nexperia USA Inc.
PZTA44,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 50 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 5mA, 50mA.As a result, the part has a transition frequency of 20MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PZTA44,115 Features
the DC current gain for this device is 50 @ 10mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
a transition frequency of 20MHz
PZTA44,115 Applications
There are a lot of Nexperia USA Inc.
PZTA44,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PZTA44,115 More Descriptions
PZTA44 Series 400 V 300 mA 1.35 W SMT NPN General Purpose Transistor - SOT-223
Trans GP BJT NPN 400V 0.3A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R / TRANS NPN 400V 0.3A SOT223
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
400V 1.35W 300mA 50@10mA,10V 20MHz 750mV@50mA,5mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
PZTA44 - NPN high-voltage transistor
TRANS NPN 400V 0.3A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:1.35W; DC Collector Current:300mA; DC Current Gain hFE:50; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:1mA; Gain Bandwidth ft Typ:20MHz; Hfe Min:50; Package / Case:SOT-223; Power Dissipation Pd:1.35W; Termination Type:SMD; Transistor Type:Power Bipolar
Trans GP BJT NPN 400V 0.3A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R / TRANS NPN 400V 0.3A SOT223
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
400V 1.35W 300mA 50@10mA,10V 20MHz 750mV@50mA,5mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
PZTA44 - NPN high-voltage transistor
TRANS NPN 400V 0.3A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:1.35W; DC Collector Current:300mA; DC Current Gain hFE:50; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:1mA; Gain Bandwidth ft Typ:20MHz; Hfe Min:50; Package / Case:SOT-223; Power Dissipation Pd:1.35W; Termination Type:SMD; Transistor Type:Power Bipolar
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