Nexperia USA Inc. PSMN027-100PS,127
- Part Number:
- PSMN027-100PS,127
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2848726-PSMN027-100PS,127
- Description:
- MOSFET N-CH 100V TO220AB
- Datasheet:
- PSMN027-100PS,127
Nexperia USA Inc. PSMN027-100PS,127 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN027-100PS,127.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max103W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation103W
- Case ConnectionDRAIN
- Turn On Delay Time14.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26.8m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1624pF @ 50V
- Current - Continuous Drain (Id) @ 25°C37A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time11.4ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8.9 ns
- Turn-Off Delay Time29.6 ns
- Continuous Drain Current (ID)37A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage100V
- Drain-source On Resistance-Max0.0268Ohm
- Drain to Source Breakdown Voltage100V
- Avalanche Energy Rating (Eas)59 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PSMN027-100PS,127 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 59 mJ.The maximum input capacitance of this device is 1624pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 37A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 29.6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN027-100PS,127 Features
the avalanche energy rating (Eas) is 59 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 29.6 ns
PSMN027-100PS,127 Applications
There are a lot of Nexperia USA Inc.
PSMN027-100PS,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 59 mJ.The maximum input capacitance of this device is 1624pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 37A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 29.6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
PSMN027-100PS,127 Features
the avalanche energy rating (Eas) is 59 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 29.6 ns
PSMN027-100PS,127 Applications
There are a lot of Nexperia USA Inc.
PSMN027-100PS,127 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PSMN027-100PS,127 More Descriptions
PSMN027-100PS - N-channel 100V 26.8 mΩ standard level MOSFET in TO220.
Trans MOSFET N-CH 100V 37A 3-Pin(3 Tab) TO-220AB Tube
100V, 37A, 26.8mohm, N-Channel, Standard Level MOSFET, TO-220
MOSFET, N CH, 100V, 37A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:100V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
Trans MOSFET N-CH 100V 37A 3-Pin(3 Tab) TO-220AB Tube
100V, 37A, 26.8mohm, N-Channel, Standard Level MOSFET, TO-220
MOSFET, N CH, 100V, 37A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:100V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PSMN027-100PS,127.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusSubcategoryReach Compliance CodeOperating Temperature (Max)ConfigurationPolarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyPower Dissipation-Max (Abs)SeriesECCN CodeAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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PSMN027-100PS,12712 WeeksThrough HoleTO-220-3NO3SILICON-55°C~175°C TJTube2011e3Active1 (Unlimited)3Tin (Sn)MOSFET (Metal Oxide)31103W TcSingleENHANCEMENT MODE103WDRAIN14.4 nsN-ChannelSWITCHING26.8m Ω @ 15A, 10V4V @ 1mA1624pF @ 50V37A Tc30nC @ 10V11.4ns10V±20V8.9 ns29.6 ns37ATO-220AB20V100V0.0268Ohm100V59 mJNoROHS3 Compliant---------------------
-
---YES-----e3-1 (Unlimited)-Matte Tin (Sn)-----ENHANCEMENT MODE-----------------------RoHS CompliantFET General Purpose Powernot_compliant175°CSingleN-CHANNEL75AMETAL-OXIDE SEMICONDUCTOR230W------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES-SILICON-55°C~175°C TJTape & Reel (TR)1999e3Obsolete1 (Unlimited)2TINMOSFET (Metal Oxide)31125W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING10.5m Ω @ 25A, 10V2V @ 1mA3300pF @ 20V75A Tc55nC @ 5V-4.5V 10V±15V------0.013Ohm-264 mJ-ROHS3 Compliant---SINGLE WITH BUILT-IN DIODE-75A--TrenchMOS™EAR99LOGIC LEVEL COMPATIBLESINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not Qualified55V240A55V
-
12 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)2014e3Active1 (Unlimited)4Tin (Sn)MOSFET (Metal Oxide)41130W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING12m Ω @ 15A, 10V4V @ 1mA3500pF @ 50V60A Tc64nC @ 10V-10V±20V--60AMO-235--0.012Ohm-170 mJ-ROHS3 Compliant-not_compliant-SINGLE WITH BUILT-IN DIODE-------SINGLEGULL WING----100V-100V
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