Nexperia USA Inc. PMZB390UNEYL
- Part Number:
- PMZB390UNEYL
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478935-PMZB390UNEYL
- Description:
- MOSFET N-CH 30V SGL XQFN3
- Datasheet:
- PMZB390UNEYL
Nexperia USA Inc. PMZB390UNEYL technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMZB390UNEYL.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max350mW Ta 5.43W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs470m Ω @ 900mA, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds41pF @ 15V
- Current - Continuous Drain (Id) @ 25°C900mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.3nC @ 4.5V
- Rise Time8ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)900mA
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.9A
- Drain-source On Resistance-Max0.47Ohm
- RoHS StatusROHS3 Compliant
PMZB390UNEYL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 41pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
PMZB390UNEYL Features
a continuous drain current (ID) of 900mA
the turn-off delay time is 12 ns
a 30V drain to source voltage (Vdss)
PMZB390UNEYL Applications
There are a lot of Nexperia USA Inc.
PMZB390UNEYL applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 41pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 900mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
PMZB390UNEYL Features
a continuous drain current (ID) of 900mA
the turn-off delay time is 12 ns
a 30V drain to source voltage (Vdss)
PMZB390UNEYL Applications
There are a lot of Nexperia USA Inc.
PMZB390UNEYL applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
PMZB390UNEYL More Descriptions
PMZB390UNE Series 30 V 900 mA Surface Mount N-Channel TrenchMOS FET - DFN1006B-3
PMZB390UNE - 30 V, N-channel Trench MOSFET
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN-B T/R
Bipolar Transistors - BJT NPN Epitaxial Transistor
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 0.9A, SOT-883B;
MOSFET N-CH 30V 900MA DFN1006B-3
PMZB390UNE/XQFN3/REEL 7" Q1/T1
PMZB390UNE - 30 V, N-channel Trench MOSFET
Trans MOSFET N-CH 30V 0.9A 3-Pin DFN-B T/R
Bipolar Transistors - BJT NPN Epitaxial Transistor
Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 0.9A, SOT-883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 0.9A, SOT-883B;
MOSFET N-CH 30V 900MA DFN1006B-3
PMZB390UNE/XQFN3/REEL 7" Q1/T1
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