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PEMF21,115

Nexperia USA Inc. PEMF21,115

Part Number:
PEMF21,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2844525-PEMF21,115
Description:
TRANS NPN PREBIAS/PNP SOT666
ECAD Model:
Datasheet:
PEMF21,115

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Specifications
Nexperia USA Inc. PEMF21,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMF21,115.
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    300mW
  • Terminal Form
    FLAT
  • Base Part Number
    PEMF21
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V / 200 @ 10mA 2V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
  • Collector Emitter Breakdown Voltage
    12V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 12V
  • Current - Collector (Ic) (Max)
    100mA 500mA
  • Max Frequency
    280MHz
  • Transition Frequency
    280MHz
  • Max Breakdown Voltage
    12V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    200
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    -500mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
PEMF21,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMF21,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMF21,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMF21,115 More Descriptions
Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA Automotive 6-Pin SOT-666 T/R
Tape & Reel (TR) Surface Mount 1NPN Pre-Biased 1PNP Dual Pre-Biased Bipolar Transistor (BJT) 30 @ 5mA 5V / 200 @ 10mA 2V -500mA 300mW 280MHz
BRT TRANSISTOR, NPN & PNP, 50V, 100MA, 10KOHM / 10KOHM, 6-SOT-666; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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