Nexperia USA Inc. PEMB30,115
- Part Number:
- PEMB30,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844643-PEMB30,115
- Description:
- TRANS 2PNP PREBIAS 0.3W SOT666
- ECAD Model:
-
- Datasheet:
- PEMB30,115
Nexperia USA Inc. PEMB30,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMB30,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT IN BIAS RESISTOR
- HTS Code8541.21.00.95
- Max Power Dissipation300mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMB30
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationAMPLIFIER
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Resistor - Base (R1)2.2k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PEMB30,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMB30,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMB30,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMB30,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMB30,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMB30,115 More Descriptions
PEMB30; PUMB30 - PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-666 T/R
SOT-666 Digital Transistors ROHS
NOW NEXPERIA PEMB30 - SMALL SIGN
TRANS 2PNP PREBIAS 0.3W SOT666
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-666 T/R
SOT-666 Digital Transistors ROHS
NOW NEXPERIA PEMB30 - SMALL SIGN
TRANS 2PNP PREBIAS 0.3W SOT666
The three parts on the right have similar specifications to PEMB30,115.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageResistor - Base (R1)Radiation HardeningRoHS StatusLead FreeResistor - Emitter Base (R2)WeightTerminationPower DissipationCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCView Compare
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PEMB30,1154 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR8541.21.00.95300mWFLAT26030MB3062PNPDualAMPLIFIER2 PNP - Pre-Biased (Dual)50V100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V50V2.2k ΩNoROHS3 CompliantLead Free------------ -
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO IS 1-300mWFLAT26030-62PNPDualSWITCHING2 PNP - Pre-Biased (Dual)50V100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V-2.2k ΩNoROHS3 CompliantLead Free2.2k Ω----------
-
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR-300mWFLAT--MB362PNPDualSWITCHING2 PNP - Pre-Biased (Dual)50V100mA200 @ 1mA 5V1μA100mV @ 250μA, 5mA50V50V4.7k ΩNoROHS3 Compliant--4.535924gSMD/SMT300mW100mV-5V200600μm1.7mm1.3mmNo SVHC
-
4 WeeksSurface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO IS 1-300mWFLAT--MB162PNPDualSWITCHING2 PNP - Pre-Biased (Dual)50V100mA60 @ 5mA 5V1μA150mV @ 500μA, 10mA50V-22k ΩNoROHS3 CompliantLead Free22k Ω----------
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