ON NTR4003NT1G

Transistor: N-MOSFET; unipolar; 30V; 0.5A; 1.5ohm; 0.69W; -55 150 deg.C; SMD; SOT23; AEC-Q100
NTR4003NT1G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
MOSFET N-CH 30V 500MA SOT-23 / Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69 W Silicon SMT Mosfet - SOT-23
NFET SOT23 30V .56A 1500M; Transistor Polarity:N Channel; Continuous Drain Current Id:560µA; Source Voltage Vds:30V; On Resistance
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 560mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.4V; Voltage Vgs Rds on Measurement: 4V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 560 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 1.5 / Gate-Source Voltage V = 20 / Fall Time ns = 64.2 / Rise Time ns = 47.9 / Turn-OFF Delay Time ns = 65.1 / Turn-ON Delay Time ns = 16.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 690