ON Semiconductor NSVEMT1DXV6T5G
- Part Number:
- NSVEMT1DXV6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068271-NSVEMT1DXV6T5G
- Description:
- TRANS 2PNP 60V 0.1A SOT563
- Datasheet:
- NSVEMT1DXV6T5G
ON Semiconductor NSVEMT1DXV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVEMT1DXV6T5G.
- Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Power Dissipation500mW
- Terminal FormFLAT
- Reference StandardAEC-Q101
- JESD-30 CodeR-PDSO-F6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS
- Power - Max500mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)500pA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency140MHz
- Frequency - Transition140MHz
- VCEsat-Max0.5 V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor NSVEMT1DXV6T5G is a 2-Polarity NPN Transistor Array in a SOT563 package. It has a maximum collector-emitter voltage of 60V and a maximum collector current of 0.1A. This device is designed for use in low-power switching and amplifier applications. It is suitable for use in a wide range of applications, including automotive, industrial, and consumer electronics. It features low power consumption, low noise, and high reliability. The SOT563 package provides a small footprint and is ideal for space-constrained applications.
NSVEMT1DXV6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 60V 0.1A 6-Pin SOT-563 T/R
Trans Array, Dual Pnp, 60V, 0.1A, Sot563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:60V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:100Ma Rohs Compliant: Yes |Onsemi NSVEMT1DXV6T5G
Trans GP BJT PNP 60V 0.1A 6-Pin SOT-563 T/R
Trans Array, Dual Pnp, 60V, 0.1A, Sot563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:60V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:100Ma Rohs Compliant: Yes |Onsemi NSVEMT1DXV6T5G
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