NSVEMT1DXV6T5G

ON Semiconductor NSVEMT1DXV6T5G

Part Number:
NSVEMT1DXV6T5G
Manufacturer:
ON Semiconductor
Ventron No:
3068271-NSVEMT1DXV6T5G
Description:
TRANS 2PNP 60V 0.1A SOT563
ECAD Model:
Datasheet:
NSVEMT1DXV6T5G

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Specifications
ON Semiconductor NSVEMT1DXV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVEMT1DXV6T5G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 weeks ago)
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    500mW
  • Terminal Form
    FLAT
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-F6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Power - Max
    500mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 6V
  • Current - Collector Cutoff (Max)
    500pA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    140MHz
  • Frequency - Transition
    140MHz
  • VCEsat-Max
    0.5 V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor NSVEMT1DXV6T5G is a 2-Polarity NPN Transistor Array in a SOT563 package. It has a maximum collector-emitter voltage of 60V and a maximum collector current of 0.1A. This device is designed for use in low-power switching and amplifier applications. It is suitable for use in a wide range of applications, including automotive, industrial, and consumer electronics. It features low power consumption, low noise, and high reliability. The SOT563 package provides a small footprint and is ideal for space-constrained applications.
NSVEMT1DXV6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 60V 0.1A 6-Pin SOT-563 T/R
Trans Array, Dual Pnp, 60V, 0.1A, Sot563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:60V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:100Ma Rohs Compliant: Yes |Onsemi NSVEMT1DXV6T5G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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