ON Semiconductor NSVBC124EDXV6T1G

Name: NSVBC124EDXV6T1G
Brand: ON Semiconductor
SKU: 2844665-NSVBC124EDXV6T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSVBC124EDXV6T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2844665-NSVBC124EDXV6T1G

Description:: TRANS 2NPN PREBIAS 0.5W SOT563

ECAD Model:

Datasheet:: NSVBC124EDXV6T1G

Specifications

ON Semiconductor NSVBC124EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVBC124EDXV6T1G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
500mW
Pin Count
6
Power - Max
500mW
Transistor Type
2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
Resistor - Base (R1)
22k Ω
Resistor - Emitter Base (R2)
22k Ω
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor NSVBC124EDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. This device is designed to provide a low-cost, space-saving solution for applications requiring two NPN transistors. It features a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 30V. The device is ideal for use in a variety of applications, including power management, motor control, and audio amplification. It is also suitable for use in automotive, industrial, and consumer electronics applications. The device is RoHS compliant and halogen-free.

NSVBC124EDXV6T1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Compliant Surface Mount Lead Free Tape & Reel (TR) SOT-563 6 Production (Last Updated: 2 years ago) 100 mA
SOT-563 Digital Transistors ROHS
Ss Sot563 Dual Rstr Xstr / Reel
TRANS 2NPN PREBIAS 0.5W SOT563

Product Comparison

The three parts on the right have similar specifications to NSVBC124EDXV6T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Max Power Dissipation

Pin Count

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Resistor - Base (R1)

Resistor - Emitter Base (R2)

RoHS Status

Lead Free

Surface Mount

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Terminal Form

Reference Standard

Number of Elements

Polarity

Element Configuration

Transistor Application

hFE Min

Radiation Hardening

Transistor Element Material

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Configuration

Polarity/Channel Type

View Compare
NSVBC124EDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

17 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

500mW

6

500mW

2 NPN - Pre-Biased (Dual)

250mV

100mA

60 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

22k Ω

22k Ω

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NSVBC114YDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

17 Weeks

-

Surface Mount

SOT-563, SOT-666

6

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

500mW

6

-

2 NPN - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

47k Ω

ROHS3 Compliant

Lead Free

YES

6

150°C

-55°C

BUILT IN BIAS RESISTANCE RATIO IS 4.7

BIP General Purpose Small Signal

FLAT

AEC-Q101

2

NPN

Dual

SWITCHING

80

No

-

-

-

-

-

-

NSVBC124EDXV6T1G vs NSVBC114YDXV6T1G
NSVBA114YDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

17 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

500mW

6

-

2 PNP - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

47k Ω

ROHS3 Compliant

Lead Free

-

-

150°C

-55°C

-

-

-

-

-

-

Dual

-

-

No

-

-

-

-

-

-

NSVBC124EDXV6T1G vs NSVBA114YDXV6T1G
NSVBC114EPDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 2 weeks ago)

2 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

-

Tin (Sn)

500mW

-

500mW

1 NPN, 1 PNP - Pre-Biased (Dual)

250mV

100mA

35 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

10k Ω

ROHS3 Compliant

Lead Free

-

6

-

-

BUILT IN BIAS RESISTANCE RATIO IS 1

BIP General Purpose Small Signal

FLAT

AEC-Q101

2

-

-

SWITCHING

-

-

SILICON

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-F6

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

NPN AND PNP

NSVBC124EDXV6T1G vs NSVBC114EPDXV6T1G