ON Semiconductor NSVBC114EDXV6T1G
- Part Number:
- NSVBC114EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462031-NSVBC114EDXV6T1G
- Description:
- TRANS 2NPN BIAS BIPOLAR SOT563
- ECAD Model:
-
- Datasheet:
- NSVBC114EDXV6T1G
ON Semiconductor NSVBC114EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVBC114EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation500mW
- Number of Elements2
- Power - Max500mW
- Polarity/Channel TypeNPN
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSVBC114EDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVBC114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVBC114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVBC114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVBC114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVBC114EDXV6T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
The three parts on the right have similar specifications to NSVBC114EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusLead FreeSurface MountNumber of PinsNumber of TerminationsMax Operating TemperatureMin Operating TemperatureAdditional FeatureTerminal FormPin CountReference StandardPolarityElement ConfigurationTransistor ApplicationhFE MinRadiation HardeningPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationView Compare
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NSVBC114EDXV6T1GACTIVE (Last Updated: 2 days ago)17 WeeksSurface MountSurface MountSOT-563, SOT-666SILICONTape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)BIP General Purpose Small Signal500mW2500mWNPN2 NPN - Pre-Biased (Dual)250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V10k Ω10k ΩROHS3 CompliantLead Free------------------- -
ACTIVE (Last Updated: 2 weeks ago)17 WeeksSurface MountSurface MountSOT-563, SOT-666-Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)-500mW-500mW-2 PNP - Pre-Biased (Dual)250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V10k Ω10k ΩROHS3 CompliantLead Free------------------
-
ACTIVE (Last Updated: 2 days ago)17 Weeks-Surface MountSOT-563, SOT-666-Tape & Reel (TR)2012e3yesActive1 (Unlimited)EAR99Tin (Sn)BIP General Purpose Small Signal500mW2--2 NPN - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V10k Ω47k ΩROHS3 CompliantLead FreeYES66150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 4.7FLAT6AEC-Q101NPNDualSWITCHING80No----
-
ACTIVE (Last Updated: 2 weeks ago)2 WeeksSurface MountSurface MountSOT-563, SOT-666SILICONTape & Reel (TR)2012e3yesActive1 (Unlimited)-Tin (Sn)BIP General Purpose Small Signal500mW2500mWNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V10k Ω10k ΩROHS3 CompliantLead Free--6--BUILT IN BIAS RESISTANCE RATIO IS 1FLAT-AEC-Q101--SWITCHING--NOT SPECIFIEDNOT SPECIFIEDR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
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