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NSS40300DDR2G

ON Semiconductor NSS40300DDR2G

Part Number:
NSS40300DDR2G
Manufacturer:
ON Semiconductor
Ventron No:
3068296-NSS40300DDR2G
Description:
TRANS 2PNP 40V 3A 8SOIC
ECAD Model:
Datasheet:
NSS40300DDR2G

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Specifications
ON Semiconductor NSS40300DDR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS40300DDR2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    783mW
  • Terminal Form
    GULL WING
  • Pin Count
    8
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power - Max
    653mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    170mV
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 1A 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    170mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    40V
  • Current - Collector (Ic) (Max)
    3A
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    135mV
  • Collector Base Voltage (VCBO)
    -40V
  • Emitter Base Voltage (VEBO)
    -7V
  • hFE Min
    250
  • Turn Off Time-Max (toff)
    530ns
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS40300DDR2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NSS40300DDR2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSS40300DDR2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSS40300DDR2G More Descriptions
Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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