NSS1C200MZ4T1G

ON Semiconductor NSS1C200MZ4T1G

Part Number:
NSS1C200MZ4T1G
Manufacturer:
ON Semiconductor
Ventron No:
3585479-NSS1C200MZ4T1G
Description:
TRANS PNP 100V 2A SOT223
ECAD Model:
Datasheet:
NSS1C200MZ4T1G

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Specifications
ON Semiconductor NSS1C200MZ4T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C200MZ4T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    7 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Power Dissipation
    2W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    120MHz
  • Base Part Number
    NSS1C200
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Case Connection
    COLLECTOR
  • Power - Max
    800mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    120MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    220mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    100V
  • Current - Collector (Ic) (Max)
    2A
  • Transition Frequency
    120MHz
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    150
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS1C200MZ4T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.

NSS1C200MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz


NSS1C200MZ4T1G Applications
There are a lot of ON Semiconductor
NSS1C200MZ4T1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS1C200MZ4T1G More Descriptions
Trans GP BJT PNP 100V 3A 2000mW Automotive 4-Pin(3 Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA
Low VCE(sat) Transistor, PNP, 100 V, 2.0 A
FZTA14 Series 30 V 1 A NPN Silicon Planar Darlington Transistor - SOT-223
100V 2W 2A 120@500mA2V 120MHz 220mV@2A200mA PNP -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR, PNP, -100V, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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