ON Semiconductor NSM21156DW6T1G

Name: NSM21156DW6T1G
Brand: ON Semiconductor
SKU: 2844531-NSM21156DW6T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSM21156DW6T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2844531-NSM21156DW6T1G

Description:: TRANS NPN PREBIAS/PNP SOT363

ECAD Model:

Datasheet:: NSM21156DW6T1G

Specifications

ON Semiconductor NSM21156DW6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSM21156DW6T1G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code
8541.21.00.95
Max Power Dissipation
230mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max
230mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN AND PNP
Transistor Type
1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA 10V / 220 @ 2mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA / 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
65V
Voltage - Collector Emitter Breakdown (Max)
50V 65V
Resistor - Base (R1)
10k Ω
Resistor - Emitter Base (R2)
10k Ω
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NSM21156DW6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSM21156DW6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSM21156DW6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

NSM21156DW6T1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SMALL SIGNAL BIPOLAR TRANSISTOR
Tape & Reel (TR) Surface Mount NPN AND PNP SEPARATE 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 35 @ 5mA 10V / 220 @ 2mA 5V 500nA 230mW 65V

Certification