ON Semiconductor NSBA124EDXV6T1G
- Part Number:
- NSBA124EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462169-NSBA124EDXV6T1G
- Description:
- TRANS 2PNP PREBIAS 0.5W SOT563
- ECAD Model:
-
- Datasheet:
- NSBA124EDXV6T1G
ON Semiconductor NSBA124EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBA124EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberNSBA1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min60
- Resistor - Base (R1)22k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)22k Ω
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NSBA124EDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA124EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA124EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA124EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA124EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBA124EDXV6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
50V Dual Bipolar Digital Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 22K/22Kohm, Sot-563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA124EDXV6T1G
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
50V Dual Bipolar Digital Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 22K/22Kohm, Sot-563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA124EDXV6T1G
The three parts on the right have similar specifications to NSBA124EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeFactory Lead TimeTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBA124EDXV6T1GACTIVE (Last Updated: 3 days ago)Surface MountSOT-563, SOT-666YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V500mWFLATNOT SPECIFIED-100mANOT SPECIFIEDNSBA1*6Not Qualified2PNPDual357mW2 PNP - Pre-Biased (Dual)250mV100mA60 @ 5mA 10V500nA250mV @ 300μA, 10mA50V6022k Ω-100mA22k ΩRoHS CompliantLead Free---------- -
ACTIVE (Last Updated: 1 week ago)Surface MountSOT-563, SOT-666YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V500mWFLATNOT SPECIFIED-100mANOT SPECIFIEDNSBA1*6Not Qualified2PNPDual357mW2 PNP - Pre-Biased (Dual)250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V82.2k Ω-100mA2.2k ΩRoHS CompliantLead Free4 Weeks--------
-
-Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR---FLAT260-40-6COMMERCIAL2---2 PNP - Pre-Biased (Dual)--160 @ 5mA 10V500nA250mV @ 1mA, 10mA--4.7k Ω--ROHS3 Compliant--SILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP50V100mA
-
-Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 1---FLAT260-40-6COMMERCIAL2---2 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA--47k Ω-47k ΩROHS3 Compliant--SILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP50V100mA
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