Fairchild/ON Semiconductor NDS9947
- Part Number:
- NDS9947
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070047-NDS9947
- Description:
- MOSFET 2P-CH 20V 3.5A 8-SOIC
- Datasheet:
- NDS9947
Fairchild/ON Semiconductor NDS9947 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9947.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-20V
- Max Power Dissipation900mW
- Current Rating-3.5A
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- Power - Max900mW
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs100m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds542pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.5A
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time13ns
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)-3.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-20V
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
NDS9947 Description
The NDS9947 is a Dual P-Channel Enhancement Mode Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology.
NDS9947 Features
-3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package
NDS9947 Applications
Notebook computer power management
Other battery-powered circuits
The NDS9947 is a Dual P-Channel Enhancement Mode Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology.
NDS9947 Features
-3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package
NDS9947 Applications
Notebook computer power management
Other battery-powered circuits
NDS9947 More Descriptions
Transistor MOSFET Array Dual P-Channel 20V 3.5A 8-Pin SOIC N T/R - Bulk
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):100ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V).
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):100ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V).
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