IXYS MWI225-12E9
- Part Number:
- MWI225-12E9
- Manufacturer:
- IXYS
- Ventron No:
- 3587106-MWI225-12E9
- Description:
- MOD IGBT SIXPACK E
- ECAD Model:
-
- Datasheet:
- MWI225-12E9
IXYS MWI225-12E9 technical specifications, attributes, parameters and parts with similar specifications to IXYS MWI225-12E9.
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseE
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~125°C TJ
- PackagingBulk
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations17
- Terminal FinishTin (Sn) - with Nickel (Ni) barrier
- Additional FeatureUL REGONIZED
- Max Power Dissipation1.4kW
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMWI
- Pin Count29
- JESD-30 CodeR-XUFM-X17
- Qualification StatusNot Qualified
- Number of Elements6
- ConfigurationThree Phase Inverter
- Case ConnectionISOLATED
- Power - Max1400W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)2.5V
- Max Collector Current355A
- Current - Collector Cutoff (Max)1mA
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Input Capacitance14nF
- Turn On Time350 ns
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 225A
- Turn Off Time-Nom (toff)800 ns
- IGBT TypeNPT
- NTC ThermistorYes
- Input Capacitance (Cies) @ Vce14nF @ 25V
- RoHS StatusRoHS Compliant
MWI225-12E9 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI225-12E9 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI225-12E9. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI225-12E9 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI225-12E9. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MWI225-12E9 More Descriptions
IGBT MODULE 1200V 355A 1400W E
Contact for details
IXYS power module
MOD IGBT SIXPACK E
Contact for details
IXYS power module
MOD IGBT SIXPACK E
The three parts on the right have similar specifications to MWI225-12E9.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Input CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorInput Capacitance (Cies) @ VceRoHS StatusFactory Lead TimeNumber of PinsSubcategoryVoltage - Rated DCCurrent RatingGate-Emitter Voltage-MaxHeightLengthWidthLead FreeView Compare
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MWI225-12E9Chassis MountChassis MountESILICON-40°C~125°C TJBulk2010e3yesObsolete1 (Unlimited)17Tin (Sn) - with Nickel (Ni) barrierUL REGONIZED1.4kWUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDMWI29R-XUFM-X17Not Qualified6Three Phase InverterISOLATED1400WPOWER CONTROLN-CHANNELStandard2.5V355A1mA1.2kV1200V14nF350 ns2.5V @ 15V, 225A800 nsNPTYes14nF @ 25VRoHS Compliant----------- -
Chassis Mount, ScrewChassis MountE2SILICON-40°C~125°C TJBulk2008e3yesActive1 (Unlimited)11Matte Tin (Sn) - with Nickel (Ni) barrierUL RECOGNIZED225WUPPERUNSPECIFIED--MWI20R-XUFM-X11-6Three Phase InverterISOLATED225WPOWER CONTROLN-CHANNELStandard2.7V50A2mA1.2kV1200V1.65nF170 ns2.7V @ 15V, 25A570 nsNPTNo1.65nF @ 25VROHS3 Compliant16 Weeks2Insulated Gate BIP Transistors-------
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Chassis MountChassis MountE3--Bulk---Active1 (Unlimited)---675W----MWI----Three Phase Inverter-675W--Standard2.5V225A1.8mA600V-9nF-2.5V @ 15V, 200A-NPTNo9nF @ 25VROHS3 Compliant----------
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Chassis Mount, PCBChassis MountE3SILICON-40°C~125°C TJBulk2007e3yesActive1 (Unlimited)19Matte Tin (Sn) - with Nickel (Ni) barrierUL RECOGNIZED675WUPPERUNSPECIFIED--MWI19R-XUFM-X19-6Three Phase InverterISOLATED-POWER CONTROLN-CHANNELStandard2.5V225A1.8mA600V-9nF230 ns2.5V @ 15V, 200A340 nsNPTNo9nF @ 25VROHS3 Compliant20 Weeks3Insulated Gate BIP Transistors600V225A20V17mm122mm62mmLead Free
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