MUN5314DW1T1G

ON Semiconductor MUN5314DW1T1G

Part Number:
MUN5314DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
2844420-MUN5314DW1T1G
Description:
TRANS PREBIAS NPN/PNP SOT363
ECAD Model:
Datasheet:
MUN5314DW1T1G

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Specifications
ON Semiconductor MUN5314DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5314DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 12 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO 4.7
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MUN53**DW1
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    187mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    900μm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MUN5314DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet MUN5314DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5314DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5314DW1T1G More Descriptions
MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SC-88 T/R - Product that comes on tape, but is not reeled
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
MUN5314DW1T1G NPN PNP Digi Transistor,100 mA 50V 10 kOhm,Ratio Of.21,6-Pin SC-88 | ON Semiconductor MUN5314DW1T1G
Complementary Bipolar Digital Transistor (BRT)
Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Base Emitter Resistor R2:47Kohm Rohs Compliant: Yes |Onsemi MUN5314DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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