Micron Technology Inc. MT4VDDT1664HY-335K1

Name: MT4VDDT1664HY-335K1
Brand: Micron Technology Inc.
SKU: 3863476-MT4VDDT1664HY-335K1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT4VDDT1664HY-335K1

Manufacturer:: Micron Technology Inc.

Ventron No:: 3863476-MT4VDDT1664HY-335K1

Description:: MODULE DDR SDRAM 128MB 200SODIMM

ECAD Model:

Datasheet:: MT4VDDT1664HY-335K1

Specifications

Micron Technology Inc. MT4VDDT1664HY-335K1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4VDDT1664HY-335K1.

Mount
Socket
Package / Case
200-SODIMM
Number of Pins
200
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
200
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Subcategory
DRAMs
Technology
CMOS
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
2.5V
Terminal Pitch
0.6mm
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Operating Supply Voltage
2.5V
Number of Elements
4
Temperature Grade
COMMERCIAL
Max Supply Voltage
2.7V
Min Supply Voltage
2.3V
Memory Size
128MB
Number of Ports
1
Speed
333MT/s
Memory Type
DDR SDRAM
Operating Mode
SYNCHRONOUS
Clock Frequency
167MHz
Supply Current-Max
1.08mA
Output Characteristics
3-STATE
Memory Width
64
Max Frequency
333MHz
Access Time (Max)
0.7 ns
I/O Type
COMMON
Refresh Cycles
8192
Access Mode
SINGLE BANK PAGE BURST
Height Seated (Max)
31.9mm
Length
67.6mm
RoHS Status
ROHS3 Compliant

Description

part No. MT4VDDT1664HY-335K1 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

MT4VDDT1664HY-335K1 More Descriptions

DRAM Module DDR SDRAM 128Mbyte 200SODIMM Tray
Contact for details

Product Comparison

The three parts on the right have similar specifications to MT4VDDT1664HY-335K1.

Image

Part Number

Manufacturer

Mount

Package / Case

Number of Pins

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Operating Supply Voltage

Number of Elements

Temperature Grade

Max Supply Voltage

Min Supply Voltage

Memory Size

Number of Ports

Speed

Memory Type

Operating Mode

Clock Frequency

Supply Current-Max

Output Characteristics

Memory Width

Max Frequency

Access Time (Max)

I/O Type

Refresh Cycles

Access Mode

Height Seated (Max)

Length

RoHS Status

Data Bus Width

Radiation Hardening

Packaging

Height

Lead Free

View Compare
MT4VDDT1664HY-335K1

Micron Technology Inc.

Socket

200-SODIMM

200

2003

Obsolete

1 (Unlimited)

200

70°C

0°C

AUTO/SELF REFRESH; WD-MAX

DRAMs

CMOS

DUAL

NO LEAD

NOT SPECIFIED

1

2.5V

0.6mm

unknown

NOT SPECIFIED

Not Qualified

2.5V

4

COMMERCIAL

2.7V

2.3V

128MB

1

333MT/s

DDR SDRAM

SYNCHRONOUS

167MHz

1.08mA

3-STATE

64

333MHz

0.7 ns

COMMON

8192

SINGLE BANK PAGE BURST

31.9mm

67.6mm

ROHS3 Compliant

-

-

-

-

-

-
MT4VDDT3264HY-335J1

Micron Technology Inc.

Socket

200-SODIMM

200

2003

Obsolete

1 (Unlimited)

200

70°C

0°C

-

DRAMs

CMOS

DUAL

-

-

-

2.5V

0.6mm

-

-

-

2.5V

4

COMMERCIAL

2.7V

2.3V

256MB

-

333MT/s

DDR SDRAM

-

167MHz

1.62mA

3-STATE

64

333MHz

0.7 ns

COMMON

8192

-

-

-

ROHS3 Compliant

64b

No

-

-

-

MT4VDDT1664HY-335K1 vs MT4VDDT3264HY-335J1
MT4VDDT864HG-26AB2

Micron Technology Inc.

-

200-SODIMM

200

2003

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

64MB

-

266MT/s

DDR SDRAM

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

Bulk

31.8mm

Contains Lead

MT4VDDT1664HY-335K1 vs MT4VDDT864HG-26AB2
MT4VDDT3264HIY-335J1

Micron Technology Inc.

Socket

200-SODIMM

200

2003

Obsolete

1 (Unlimited)

200

85°C

-40°C

-

DRAMs

CMOS

DUAL

-

-

-

2.5V

0.6mm

-

-

-

2.5V

4

INDUSTRIAL

2.7V

2.3V

256MB

-

333MT/s

DDR SDRAM

-

167MHz

1.62mA

3-STATE

64

333MHz

0.7 ns

COMMON

8192

-

-

-

ROHS3 Compliant

64b

No

-

-

-

MT4VDDT1664HY-335K1 vs MT4VDDT3264HIY-335J1