Micron Technology Inc. MT4VDDT3264HIY-335J1

Name: MT4VDDT3264HIY-335J1
Brand: Micron Technology Inc.
SKU: 3786802-MT4VDDT3264HIY-335J1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT4VDDT3264HIY-335J1

Manufacturer:: Micron Technology Inc.

Ventron No:: 3786802-MT4VDDT3264HIY-335J1

Description:: MODULE DDR SDRAM 256MB 200SODIMM

ECAD Model:

Datasheet:: MT4VDDT3264HIY-335J1

Specifications

Micron Technology Inc. MT4VDDT3264HIY-335J1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4VDDT3264HIY-335J1.

Mount
Socket
Package / Case
200-SODIMM
Number of Pins
200
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
200
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Subcategory
DRAMs
Technology
CMOS
Terminal Position
DUAL
Supply Voltage
2.5V
Terminal Pitch
0.6mm
Operating Supply Voltage
2.5V
Number of Elements
4
Temperature Grade
INDUSTRIAL
Max Supply Voltage
2.7V
Min Supply Voltage
2.3V
Memory Size
256MB
Speed
333MT/s
Memory Type
DDR SDRAM
Clock Frequency
167MHz
Supply Current-Max
1.62mA
Data Bus Width
64b
Output Characteristics
3-STATE
Memory Width
64
Max Frequency
333MHz
Access Time (Max)
0.7 ns
I/O Type
COMMON
Refresh Cycles
8192
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

part No. MT4VDDT3264HIY-335J1 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

MT4VDDT3264HIY-335J1 More Descriptions

DDR SDRAM 32MX64 MODULE STD ROHS 256MB 2.5V SODIMM
DRAM Module DDR SDRAM 256Mbyte 200SODIMM
Contact for details

Product Comparison

The three parts on the right have similar specifications to MT4VDDT3264HIY-335J1.

Image

Part Number

Manufacturer

Mount

Package / Case

Number of Pins

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Subcategory

Technology

Terminal Position

Supply Voltage

Terminal Pitch

Operating Supply Voltage

Number of Elements

Temperature Grade

Max Supply Voltage

Min Supply Voltage

Memory Size

Speed

Memory Type

Clock Frequency

Supply Current-Max

Data Bus Width

Output Characteristics

Memory Width

Max Frequency

Access Time (Max)

I/O Type

Refresh Cycles

Radiation Hardening

RoHS Status

Packaging

Height

Lead Free

View Compare
MT4VDDT3264HIY-335J1

Micron Technology Inc.

Socket

200-SODIMM

200

2003

Obsolete

1 (Unlimited)

200

85°C

-40°C

DRAMs

CMOS

DUAL

2.5V

0.6mm

2.5V

4

INDUSTRIAL

2.7V

2.3V

256MB

333MT/s

DDR SDRAM

167MHz

1.62mA

64b

3-STATE

64

333MHz

0.7 ns

COMMON

8192

No

ROHS3 Compliant

-

-

-

-
MT4VDDT3264AY-40BJ1

Micron Technology Inc.

Socket

184-UDIMM

184

2003

Obsolete

1 (Unlimited)

-

70°C

0°C

-

-

-

-

-

2.6V

4

-

2.7V

2.5V

256MB

400MT/s

DDR SDRAM

-

-

64b

-

-

400MHz

-

-

-

No

ROHS3 Compliant

-

-

-

MT4VDDT3264HIY-335J1 vs MT4VDDT3264AY-40BJ1
MT4VDDT1664HG-26AC3

Micron Technology Inc.

-

200-SODIMM

200

2003

Discontinued

1 (Unlimited)

-

70°C

0°C

-

-

-

-

-

2.5V

-

-

-

-

128MB

266MT/s

DDR SDRAM

-

-

64b

-

-

266MHz

-

-

-

No

Non-RoHS Compliant

Bulk

31.8mm

Contains Lead

MT4VDDT3264HIY-335J1 vs MT4VDDT1664HG-26AC3
MT4VDDT864AG-26AB1

Micron Technology Inc.

-

184-UDIMM

184

2002

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

64MB

266MT/s

DDR SDRAM

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Bulk

31.8mm

Contains Lead

MT4VDDT3264HIY-335J1 vs MT4VDDT864AG-26AB1