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MT41J64M16JT-125:G

Micron Technology Inc. MT41J64M16JT-125:G

Part Number:
MT41J64M16JT-125:G
Manufacturer:
Micron Technology Inc.
Ventron No:
3728521-MT41J64M16JT-125:G
Description:
IC SDRAM 1GBIT 800MHZ 96FBGA
ECAD Model:
Datasheet:
MT41J256M4,128M8,64M16

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Specifications
Micron Technology Inc. MT41J64M16JT-125:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT41J64M16JT-125:G.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    96-TFBGA
  • Number of Pins
    96
  • Operating Temperature
    0°C~95°C TC
  • Packaging
    Tray
  • Published
    2014
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    96
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.32
  • Technology
    SDRAM - DDR3
  • Voltage - Supply
    1.425V~1.575V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    1.5V
  • Terminal Pitch
    0.8mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    MT41J64M16
  • Pin Count
    96
  • Operating Supply Voltage
    1.5V
  • Supply Voltage-Max (Vsup)
    1.575V
  • Supply Voltage-Min (Vsup)
    1.425V
  • Memory Size
    1Gb 64M x 16
  • Number of Ports
    1
  • Nominal Supply Current
    205mA
  • Memory Type
    Volatile
  • Clock Frequency
    800MHz
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    16b
  • Organization
    64MX16
  • Output Characteristics
    3-STATE
  • Memory Width
    16
  • Address Bus Width
    16b
  • Density
    1 Gb
  • Standby Current-Max
    0.012A
  • Access Time (Max)
    0.1 ns
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    8
  • Interleaved Burst Length
    8
  • Access Mode
    MULTI BANK PAGE BURST
  • Height Seated (Max)
    1.2mm
  • Length
    14mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MT41J64M16JT-125:G Overview
This particular component is manufactured by Micron Technology Inc. and falls under the Memory category. It is a Memory chip with 96 pins and is labeled as Pbfree, indicating that it does not contain any lead. Its Moisture Sensitivity Level is 3, meaning it can withstand exposure to moisture for up to 168 hours. The HTS Code for this part is 8542.32.00.32. Its Peak Reflow Temperature is 260 degrees Celsius and has a Terminal Pitch of 0.8mm. The Operating Supply Voltage for this chip is 1.5V and it utilizes a Parallel Memory Interface. Its memory density is 1 Gb and it is compliant with the Restriction of Hazardous Substances Directive (RoHS), in its third iteration.

MT41J64M16JT-125:G Features
Package / Case: 96-TFBGA
96 Pins
Operating Supply Voltage:1.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON

MT41J64M16JT-125:G Applications
There are a lot of Micron Technology Inc. MT41J64M16JT-125:G Memory applications.

personal digital assistants
cell phones
mainframes
supercomputers
main computer memory
graphics card
nonvolatile BIOS memory
personal computers
DVD disk buffer
networks
MT41J64M16JT-125:G More Descriptions
DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 1.5V 96-Pin FBGA Tray
V68A .64MX16 DDR3 SDRAM PLASTIC COMMERCIAL PBF FBGA 1.5V
EAR99 Surface Mount MT41J64M16 Tray ic memory 800MHz 0.1ns 14mm 205mA
DRAM, DDR3 SDRAM, 1Gb, x16, 1.5V, 96-ball FBGA, RoHSMicron SCT
IC DDR3 SDRAM 1GBIT 800MHZ 96BGA
Product Description Demo for Development.
Product Comparison
The three parts on the right have similar specifications to MT41J64M16JT-125:G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Nominal Supply Current
    Memory Type
    Clock Frequency
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Output Characteristics
    Memory Width
    Address Bus Width
    Density
    Standby Current-Max
    Access Time (Max)
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Access Mode
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Access Time
    Memory Density
    Width
    Series
    Write Cycle Time - Word, Page
    View Compare
  • MT41J64M16JT-125:G
    MT41J64M16JT-125:G
    Micron Technology Inc.
    Surface Mount
    Surface Mount
    96-TFBGA
    96
    0°C~95°C TC
    Tray
    2014
    e1
    yes
    Obsolete
    3 (168 Hours)
    96
    EAR99
    TIN SILVER COPPER
    AUTO/SELF REFRESH
    8542.32.00.32
    SDRAM - DDR3
    1.425V~1.575V
    BOTTOM
    260
    1
    1.5V
    0.8mm
    30
    MT41J64M16
    96
    1.5V
    1.575V
    1.425V
    1Gb 64M x 16
    1
    205mA
    Volatile
    800MHz
    DRAM
    Parallel
    16b
    64MX16
    3-STATE
    16
    16b
    1 Gb
    0.012A
    0.1 ns
    COMMON
    8192
    8
    8
    MULTI BANK PAGE BURST
    1.2mm
    14mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT41K1G8RKB-107:P
    MT41K1G8RKB-107:P
    Micron Technology Inc.
    -
    Surface Mount
    78-TFBGA
    -
    0°C~95°C TC
    Tray
    -
    e1
    -
    Active
    1 (Unlimited)
    78
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    SELF REFRESH
    -
    SDRAM - DDR3L
    1.283V~1.45V
    BOTTOM
    260
    1
    1.35V
    0.8mm
    -
    -
    -
    -
    1.45V
    1.283V
    8Gb 1G x 8
    1
    -
    Volatile
    933MHz
    DRAM
    Parallel
    -
    1GX8
    -
    8
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.2mm
    10.5mm
    -
    ROHS3 Compliant
    -
    YES
    30
    R-PBGA-B78
    SYNCHRONOUS
    20ns
    8589934592 bit
    8mm
    -
    -
    MT41J64M16JT-125:G vs MT41K1G8RKB-107:P
  • MT41K2G4RKB-107:P TR
    MT41K2G4RKB-107:P TR
    Micron Technology Inc.
    -
    Surface Mount
    78-TFBGA
    -
    0°C~95°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR3L
    1.283V~1.45V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8Gb 2G x 4
    -
    -
    Volatile
    933MHz
    DRAM
    Parallel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    20ns
    -
    -
    TwinDie™
    15ns
    MT41J64M16JT-125:G vs MT41K2G4RKB-107:P TR
  • MT41K1G8RKB-107:P TR
    MT41K1G8RKB-107:P TR
    Micron Technology Inc.
    -
    Surface Mount
    78-TFBGA
    -
    0°C~95°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR3L
    1.283V~1.45V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8Gb 1G x 8
    -
    -
    Volatile
    933MHz
    DRAM
    Parallel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    20ns
    -
    -
    TwinDie™
    15ns
    MT41J64M16JT-125:G vs MT41K1G8RKB-107:P TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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