Everspin Technologies Inc. MR25H40CDCR
- Part Number:
- MR25H40CDCR
- Manufacturer:
- Everspin Technologies Inc.
- Ventron No:
- 3721909-MR25H40CDCR
- Description:
- IC MRAM 4MBIT 40MHZ 8DFN
- Datasheet:
- MR25H40CDCR
Everspin Technologies Inc. MR25H40CDCR technical specifications, attributes, parameters and parts with similar specifications to Everspin Technologies Inc. MR25H40CDCR.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-VDFN Exposed Pad
- Number of Pins8
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2014
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN CodeEAR99
- TechnologyMRAM (Magnetoresistive RAM)
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch1.27mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- Qualification StatusNot Qualified
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- InterfaceSPI, Serial
- Memory Size4Mb 512K x 8
- Nominal Supply Current42mA
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency40MHz
- Access Time9 ns
- Memory FormatRAM
- Memory InterfaceSPI
- Memory Width8
- Density4 Mb
- Word Size8b
- Height Seated (Max)1.05mm
- Length6mm
- Width5mm
- RoHS StatusROHS3 Compliant
MR25H40CDCR Overview
The Moisture Sensitivity Level (MSL) of this product is 3, which means it can withstand exposure to ambient air for up to 168 hours. It utilizes MRAM (Magnetoresistive RAM) technology and has 1 function. The supply voltage for this product is 3.3V and the terminal pitch is 1.27mm. The Time@Peak Reflow Temperature-Max (s) is NOT SPECIFIED. It operates in synchronous mode and has a memory width of 8. The density of this product is 4 Mb and its length is 6mm.
MR25H40CDCR Features
Package / Case: 8-VDFN Exposed Pad
8 Pins
Operating Supply Voltage:3.3V
MR25H40CDCR Applications
There are a lot of Everspin Technologies Inc.
MR25H40CDCR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The Moisture Sensitivity Level (MSL) of this product is 3, which means it can withstand exposure to ambient air for up to 168 hours. It utilizes MRAM (Magnetoresistive RAM) technology and has 1 function. The supply voltage for this product is 3.3V and the terminal pitch is 1.27mm. The Time@Peak Reflow Temperature-Max (s) is NOT SPECIFIED. It operates in synchronous mode and has a memory width of 8. The density of this product is 4 Mb and its length is 6mm.
MR25H40CDCR Features
Package / Case: 8-VDFN Exposed Pad
8 Pins
Operating Supply Voltage:3.3V
MR25H40CDCR Applications
There are a lot of Everspin Technologies Inc.
MR25H40CDCR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MR25H40CDCR More Descriptions
EAR99 Surface Mount Tape & Reel (TR) MRAM (Magnetoresistive RAM) ic memory 40MHz 9ns 5mm 42mA
TAPE & REEL | NVRAM 4Mb 3V 512Kx8 Serial MRAM
IC RAM 4MBIT SPI 40MHZ 8DFN
TAPE & REEL | NVRAM 4Mb 3V 512Kx8 Serial MRAM
IC RAM 4MBIT SPI 40MHZ 8DFN
The three parts on the right have similar specifications to MR25H40CDCR.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)InterfaceMemory SizeNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceMemory WidthDensityWord SizeHeight Seated (Max)LengthWidthRoHS StatusSurface MountHTS CodeOrganizationWrite Cycle Time - Word, PageMemory DensityOperating Supply CurrentData Bus WidthStandby Current-MaxAccess Time (Max)Lead FreeRadiation HardeningView Compare
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MR25H40CDCR14 WeeksSurface MountSurface Mount8-VDFN Exposed Pad8-40°C~85°C TATape & Reel (TR)2014Not For New Designs3 (168 Hours)8EAR99MRAM (Magnetoresistive RAM)3V~3.6VDUALNOT SPECIFIED13.3V1.27mmNOT SPECIFIED8Not Qualified3.3V3.6V3VSPI, Serial4Mb 512K x 842mANon-VolatileSYNCHRONOUS40MHz9 nsRAMSPI84 Mb8b1.05mm6mm5mmROHS3 Compliant------------
-
24 Weeks-Surface Mount48-LFBGA480°C~70°C TACut Tape (CT)2012Discontinued3 (168 Hours)48EAR99MRAM (Magnetoresistive RAM)2.7V~3.6VBOTTOM26013.3V0.75mm4048--3.6V2.7V-256Kb 32K x 8-Non-VolatileASYNCHRONOUS--RAMParallel8--1.35mm8mm8mmROHS3 CompliantYES8542.32.00.7132KX845ns262144 bit------
-
12 WeeksSurface MountSurface Mount44-TSOP (0.400, 10.16mm Width)44-40°C~85°C TATray2011Active3 (168 Hours)44EAR99MRAM (Magnetoresistive RAM)3V~3.6VDUALNOT SPECIFIED13.3V0.8mmNOT SPECIFIED44Not Qualified3.3V3.6V3V-256Kb 32K x 875mANon-VolatileASYNCHRONOUS--RAMParallel8256 kb8b1.2mm18.41mm-ROHS3 Compliant-8542.32.00.7132KX835ns-65mA8b0.007A35 nsLead Free-
-
14 WeeksSurface MountSurface Mount8-TDFN Exposed Pad8-40°C~85°C TATray2013Not For New Designs3 (168 Hours)8EAR99MRAM (Magnetoresistive RAM)2.7V~3.6VDUAL-13V1.27mm-8-3.3V3.6V2.7VSPI, Serial256Kb 32K x 827mANon-Volatile-40MHz10 nsRAMSPI8256 kb8b1.05mm6mm5mmROHS3 Compliant-------0.00001A-Lead FreeNo
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