MPSH11

Fairchild/ON Semiconductor MPSH11

Part Number:
MPSH11
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2844777-MPSH11
Description:
TRANSISTOR RF NPN TO-92
ECAD Model:
Datasheet:
MPSH11

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Specifications
Fairchild/ON Semiconductor MPSH11 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSH11.
  • Factory Lead Time
    36 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    195mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    350mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    50mA
  • Frequency
    650MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    350mW
  • Output Power
    50mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    25V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 4mA 10V
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    650MHz
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    60
  • Continuous Collector Current
    50mA
  • Collector-Base Capacitance-Max
    0.7pF
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MPSH11 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MPSH11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MPSH11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MPSH11 More Descriptions
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Bulk
Bulk Through Hole NPN Single RF Transistor 60 @ 4mA 10V 50mA 350mW 650MHz
BIPOLAR TRANSISTOR, NPN, 25V; Transistor
NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.
Product Comparison
The three parts on the right have similar specifications to MPSH11.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Output Power
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Collector-Base Capacitance-Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Supplier Device Package
    Base Part Number
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Lifecycle Status
    Published
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Power Dissipation-Max
    Frequency (Max)
    Gain Bandwidth Product
    Collector Emitter Saturation Voltage
    Radiation Hardening
    Pbfree Code
    HTS Code
    Reach Compliance Code
    Transistor Application
    Gain
    Max Breakdown Voltage
    Highest Frequency Band
    Noise Figure (dB Typ @ f)
    View Compare
  • MPSH11
    MPSH11
    36 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    195mg
    SILICON
    -55°C~150°C TJ
    Bulk
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    25V
    350mW
    BOTTOM
    NOT SPECIFIED
    50mA
    650MHz
    NOT SPECIFIED
    3
    Not Qualified
    1
    Single
    350mW
    50mW
    NPN
    NPN
    25V
    50mA
    60 @ 4mA 10V
    25V
    650MHz
    30V
    3V
    60
    50mA
    0.7pF
    6.35mm
    6.35mm
    6.35mm
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSH81_D75Z
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    60 @ 5mA 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-92-3
    MPSH81
    350mW
    20V
    50mA
    600MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSH10
    -
    Through Hole
    -
    TO-92
    3
    195mg
    -
    -
    Bulk
    -
    -
    -
    -
    -
    -
    -
    25V
    -
    -
    -
    50mA
    650MHz
    -
    -
    -
    1
    Single
    350mW
    -
    -
    -
    25V
    50mA
    -
    25V
    -
    30V
    3V
    60
    50mA
    -
    6.35mm
    6.35mm
    6.35mm
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    650MHz
    LIFETIME (Last Updated: 2 hours ago)
    1996
    150°C
    -55°C
    NPN
    350mW
    650MHz
    650MHz
    500mV
    No
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSH17
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    15V
    350mW
    BOTTOM
    240
    5mA
    -
    30
    3
    Not Qualified
    1
    Single
    -
    -
    NPN
    NPN
    15V
    -
    25 @ 5mA 10V
    15V
    800MHz
    20V
    3V
    25
    -
    0.9pF
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    MPSH17
    -
    -
    -
    -
    OBSOLETE (Last Updated: 5 days ago)
    2006
    -
    -
    -
    -
    -
    800MHz
    500mV
    -
    no
    8541.21.00.75
    not_compliant
    AMPLIFIER
    24dB
    15V
    VERY HIGH FREQUENCY B
    6dB @ 200MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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