NXP USA Inc. BFU790F,115

Name: BFU790F,115
Brand: NXP USA Inc.
SKU: 3585332-BFU790F,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFU790F,115

Manufacturer:: NXP USA Inc.

Ventron No:: 3585332-BFU790F,115

Description:: TRANSISTOR NPN SOT343F

ECAD Model:

Datasheet:: BFU790F,115

Specifications

NXP USA Inc. BFU790F,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU790F,115.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-343F
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BFU790
Pin Count
4
Power - Max
234mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
235 @ 10mA 2V
Voltage - Collector Emitter Breakdown (Max)
2.8V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
25GHz
Source Url Status Check Date
2013-06-14 00:00:00
Noise Figure (dB Typ @ f)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
RoHS Status
ROHS3 Compliant

Description

Description:
The BFU790F,115 is a NPN wideband silicon germanium RF transistor from NXP Semiconductors. It is designed for use in high frequency applications such as cellular base stations, wireless LANs, and other RF applications.

Features:
• High gain and power output
• Low noise figure
• High linearity
• High frequency operation up to 2.5GHz
• Low power consumption
• RoHS compliant

Applications:
• Cellular base stations
• Wireless LANs
• RF amplifiers
• High frequency switching
• High frequency power amplifiers

BFU790F,115 More Descriptions

Trans Gp Bjt Npn 2.8V 0.1A 4-Pin(3 Tab) Dfp T/R Rohs Compliant: Yes |Nxp BFU790F,115
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon Germanium, NPN
BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
NPN wideband silicon germanium RF transistor, DFP4, RoHSNXP Semiconductors SCT
RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F
RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 234mW; DC Collector Current: 100mA; DC Current Gain hFE: 235hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification