ON Semiconductor MPSH17G
- Part Number:
- MPSH17G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068509-MPSH17G
- Description:
- TRANS NPN RF SS 15V TO92
- Datasheet:
- MPSH17G
ON Semiconductor MPSH17G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSH17G.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC15V
- Max Power Dissipation350mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating5mA
- Frequency800MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSH17
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product800MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 5mA 10V
- Collector Emitter Breakdown Voltage15V
- Gain24dB
- Transition Frequency800MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)3V
- hFE Min25
- Collector-Base Capacitance-Max0.9pF
- Noise Figure (dB Typ @ f)6dB @ 200MHz
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSH17G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MPSH17G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MPSH17G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MPSH17G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MPSH17G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MPSH17G More Descriptions
RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
RF Bipolar Transistor; Leaded Process Compatible:Yes RoHS Compliant: Yes
Bipolar Transistors - BJT 15V CATV NPN
RF Bipolar Transistor; Leaded Process Compatible:Yes RoHS Compliant: Yes
Bipolar Transistors - BJT 15V CATV NPN
The three parts on the right have similar specifications to MPSH17G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)DC Current Gain (hFE) (Min) @ Ic, VceCollector Emitter Breakdown VoltageGainTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinCollector-Base Capacitance-MaxNoise Figure (dB Typ @ f)RoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionWeightMax Operating TemperatureMin Operating TemperaturePolarityPower Dissipation-MaxFrequency (Max)Max Collector CurrentContinuous Collector CurrentHeightLengthWidthRadiation HardeningView Compare
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MPSH17GOBSOLETE (Last Updated: 1 week ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors15V350mWBOTTOM2605mA800MHz40MPSH173Not Qualified1Single350mWAMPLIFIER800MHzNPNNPN15V25 @ 5mA 10V15V24dB800MHz500mV20V3V250.9pF6dB @ 200MHzRoHS CompliantLead Free------------------
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--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)-----------MPSH81--------PNP-60 @ 5mA 10V-----------TO-92-3350mW20V50mA600MHz------------
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)2011--Obsolete1 (Unlimited)-----------MPSH81--------PNP-60 @ 5mA 10V-----------TO-92-3350mW20V50mA600MHz------------
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LIFETIME (Last Updated: 2 hours ago)Through Hole-TO-923--Bulk1996--------25V---50mA650MHz----1Single350mW-650MHz--25V-25V--500mV30V3V60--RoHS CompliantLead Free----650MHz195mg150°C-55°CNPN350mW650MHz50mA50mA6.35mm6.35mm6.35mmNo
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