Diodes Incorporated MMDT5451-7-F

Name: MMDT5451-7-F
Brand: Diodes Incorporated
SKU: 2843824-MMDT5451-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMDT5451-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2843824-MMDT5451-7-F

Description:: TRANS NPN/PNP 160V/150V SOT363

ECAD Model:

Datasheet:: MMDT5451-7-F

Specifications

Diodes Incorporated MMDT5451-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT5451-7-F.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
160V
Max Power Dissipation
200mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMDT5451
Pin Count
6
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Transistor Type
NPN, PNP
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V / 60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
160V 150V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
Continuous Collector Current
-200mA
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMDT5451-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet MMDT5451-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMDT5451-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMDT5451-7-F More Descriptions

MMDT5451 Series NPN/PNP 160 V 200 mW Small Signal Transistor SMT - SOT-363
Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R / TRANS NPN/PNP 160V/150V SOT363
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon
GP BJT NPN/PNP 160/150V 0.2A 6P SOT363 | Diodes Inc MMDT5451-7-F
Ss Hi Voltage Transistor Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. MMDT5451-7-F
Transistor, NPN/PNP, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC
TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Product Comparison

The three parts on the right have similar specifications to MMDT5451-7-F.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-30 Code

Qualification Status

Configuration

Power - Max

Polarity/Channel Type

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Reach Compliance Code

Termination

View Compare
MMDT5451-7-F

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

BIP General Purpose Small Signal

160V

200mW

GULL WING

260

200mA

300MHz

40

MMDT5451

6

2

NPN, PNP

Dual

200mW

SWITCHING

300MHz

NPN, PNP

200mV

200mA

80 @ 10mA 5V / 60 @ 10mA 5V

50nA ICBO

200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

150V

160V 150V

100MHz

200mV

150V

180V

-5V

60

-200mA

1mm

2.2mm

1.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMDT5401-TP

Micro Commercial Co

12 Weeks

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

Other Transistors

-

-

GULL WING

260

-

-

10

MMDT5401

6

2

-

-

-

SWITCHING

-

2 PNP (Dual)

-

-

60 @ 10mA 5V

50nA ICBO

500mV @ 5mA, 50mA

-

150V

100MHz

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

R-PDSO-G6

Not Qualified

SEPARATE, 2 ELEMENTS

200mW

PNP

200mA

300MHz

0.2W

300ns

70ns

-

-

MMDT5451-7-F vs MMDT5401-TP
MMDT3904-7

Diodes Incorporated

-

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2003

e0

-

Obsolete

1 (Unlimited)

6

EAR99

Tin/Lead (Sn85Pb15)

Other Transistors

40V

200mW

GULL WING

235

200mA

-

10

MMDT3904

6

2

NPN

Dual

-

SWITCHING

300MHz

2 NPN (Dual)

300mV

200mA

100 @ 10mA 1V

50nA ICBO

300mV @ 5mA, 50mA

40V

-

300MHz

-

40V

60V

6V

100

200mA

1mm

2.2mm

1.35mm

No SVHC

-

Non-RoHS Compliant

Contains Lead

-

-

Not Qualified

-

-

-

-

-

-

250ns

70ns

not_compliant

-

MMDT5451-7-F vs MMDT3904-7
MMDT3906VC-7

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

Other Transistors

-40V

150mW

FLAT

260

-200mA

250MHz

40

MMDT3906VC

6

2

PNP

Dual

150mW

SWITCHING

250MHz

2 PNP (Dual)

40V

200mA

100 @ 10mA 1V

-

400mV @ 5mA, 50mA

40V

-

250MHz

-400mV

40V

40V

5V

60

-

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

300ns

70ns

-

SMD/SMT

MMDT5451-7-F vs MMDT3906VC-7