Diodes Incorporated MMDT2227-7
- Part Number:
- MMDT2227-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2844002-MMDT2227-7
- Description:
- TRANS NPN/PNP 40V/60V SOT363
- ECAD Model:
-
- Datasheet:
- MMDT2227-7
Diodes Incorporated MMDT2227-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT2227-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn85Pb15)
- Voltage - Rated DC40V
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating600mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMDT2227
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Transistor TypeNPN, PNP
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)40V 60V
- Transition Frequency300MHz
- Max Breakdown Voltage60V
- Frequency - Transition300MHz 200MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Continuous Collector Current600mA
- Turn On Time-Max (ton)35ns
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
Description: The MMDT2227-7 is a bipolar transistor array from Diodes Inc. It is a dual NPN/PNP transistor array in a SOT363 package. It has a maximum collector-emitter voltage of 40V for NPN transistors and 60V for PNP transistors.
Features:
- Dual NPN/PNP transistor array
- SOT363 package
- Maximum collector-emitter voltage of 40V for NPN transistors and 60V for PNP transistors
- Low saturation voltage
- High current gain
- Low noise
Applications:
- Switching applications
- Amplification
- Motor control
- Power management
- Automotive applications
- Industrial applications
Features:
- Dual NPN/PNP transistor array
- SOT363 package
- Maximum collector-emitter voltage of 40V for NPN transistors and 60V for PNP transistors
- Low saturation voltage
- High current gain
- Low noise
Applications:
- Switching applications
- Amplification
- Motor control
- Power management
- Automotive applications
- Industrial applications
MMDT2227-7 More Descriptions
TRANS NPN/PNP 40V/60V SOT363
TRANS 2NPN 40V 0.6A SOT363
TRANS 2NPN 40V 0.6A SOT363
The three parts on the right have similar specifications to MMDT2227-7.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeSurface MountPbfree CodeSubcategoryJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn Off Time-Max (toff)TerminationFrequencyPower DissipationCollector Emitter Saturation VoltageRadiation HardeningView Compare
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MMDT2227-7Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2005e0Discontinued1 (Unlimited)6EAR99Tin/Lead (Sn85Pb15)40V200mWGULL WING235not_compliant600mA10MMDT22276Not Qualified2NPN, PNPDualSWITCHING300MHzNPN, PNP1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA60V40V 60V300MHz60V300MHz 200MHz75V6V100600mA35ns1mm2.2mm1.35mmNo SVHCNon-RoHS CompliantContains Lead----------------- -
-Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2005e3Active1 (Unlimited)6EAR99Matte Tin (Sn)--GULL WING260--10MMDT54016Not Qualified2--SWITCHING-2 PNP (Dual)--60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA-150V100MHz-300MHz----70ns----ROHS3 Compliant-12 WeeksYESyesOther TransistorsR-PDSO-G6SEPARATE, 2 ELEMENTS200mWPNP200mA0.2W300ns-----
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2003e0Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn85Pb15)40V200mWGULL WING235not_compliant600mA10MMDT2222A6Not Qualified2NPNDual-300MHz2 NPN (Dual)1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V-300MHz40V-75V6V100600mA35ns1mm2.2mm1.35mmNo SVHCNon-RoHS CompliantContains Lead----------285ns-----
-
Surface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2005e3Active1 (Unlimited)6EAR99Matte Tin (Sn)-40V150mWFLAT260--200mA40MMDT3906VC6-2PNPDualSWITCHING250MHz2 PNP (Dual)40V200mA100 @ 10mA 1V-400mV @ 5mA, 50mA40V-250MHz40V-40V5V60-70ns600μm1.6mm1.2mmNo SVHCROHS3 CompliantLead Free19 Weeks-yesOther Transistors------300nsSMD/SMT250MHz150mW-400mVNo
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