ON Semiconductor MMBTA05LT1G
- Part Number:
- MMBTA05LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845152-MMBTA05LT1G
- Description:
- TRANS NPN 60V 0.5A SOT23
- Datasheet:
- MMBTA05LT1G
ON Semiconductor MMBTA05LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA05LT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating96.1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA05
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max225mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA05LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA05LT1G More Descriptions
ON Semi MMBTA05LT1G NPN Bipolar Transistor; 0.5 A; 60 V; 3-Pin SOT-23
60V 225mW 100@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMBT Series 60 V 500 mA Surface Mount NPN Silicon Driver Transistor - SOT-23
Trans GP BJT NPN 60V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN 60V 0.5A SOT23
BIPOLAR Transistor, NPN, 60V SOT-23; TRA; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V;
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhzrohs Compliant: Yes |Onsemi MMBTA05LT1G.
60V 225mW 100@100mA,1V 500mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMBT Series 60 V 500 mA Surface Mount NPN Silicon Driver Transistor - SOT-23
Trans GP BJT NPN 60V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS NPN 60V 0.5A SOT23
BIPOLAR Transistor, NPN, 60V SOT-23; TRA; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V;
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhzrohs Compliant: Yes |Onsemi MMBTA05LT1G.
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