ON Semiconductor MJD18002D2T4G

MJD18002D2T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 6 @ 1A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 200mA, 1A.The emitter base voltage can be kept at 11V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 13MHz.The breakdown input voltage is 450V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

MJD18002D2T4G Features
the DC current gain for this device is 6 @ 1A 1V
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 11V
the current rating of this device is 2A
a transition frequency of 13MHz


MJD18002D2T4G Applications
There are a lot of ON Semiconductor
MJD18002D2T4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting