MJD122T4G

ON Semiconductor MJD122T4G

Part Number:
MJD122T4G
Manufacturer:
ON Semiconductor
Ventron No:
2462900-MJD122T4G
Description:
TRANS NPN DARL 100V 8A DPAK
ECAD Model:
Datasheet:
MJD122T4G

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Specifications
ON Semiconductor MJD122T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD122T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD122
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    20W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 4A 4V
  • Current - Collector Cutoff (Max)
    10μA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 80mA, 8A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    2V
  • Max Breakdown Voltage
    100V
  • Frequency - Transition
    4MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    8A
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD122T4G Description
The MJD122T4G is an 8A NPN bipolar power Darlington Transistor is designed for general-purpose amplifier and low-speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. It is the surface-mount replacement for the 2N6040 to 2N6045 series, TIP120 to TIP122 series, and TIP125 to TIP127 series.

MJD122T4G Features
Epoxy Meets UL 94 V?0 @ 0.125 in High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040?2N6045 Series, TIP120?TIP122 Series, and TIP125?TIP127 Series
Monolithic Construction With Built?in Base?Emitter Shunt Resistors
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

MJD122T4G Applications
General-purpose amplifier 
Low-speed switching applications
MJD122T4G More Descriptions
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
ON Semi MJD122T4G NPN Darlington Transistor; 8 A 100 V HFE:100; 3-Pin DPAK
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
MJD122T4G ON Semiconductor Darlington Bipolar Transistors 8A 100V Power NPNDPAK RoHS
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL
Darlington Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260
Product Comparison
The three parts on the right have similar specifications to MJD122T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Mount
    Terminal Finish
    Additional Feature
    Frequency
    Qualification Status
    Gain Bandwidth Product
    Polarity/Channel Type
    hFE Min
    View Compare
  • MJD122T4G
    MJD122T4G
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    100V
    1.75W
    GULL WING
    260
    8A
    40
    MJD122
    3
    R-PSSO-G2
    1
    NPN
    Single
    20W
    COLLECTOR
    SWITCHING
    Halogen Free
    NPN - Darlington
    100V
    8A
    1000 @ 4A 4V
    10μA
    4V @ 80mA, 8A
    100V
    4MHz
    2V
    100V
    4MHz
    100V
    5V
    8A
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD122
    -
    -
    -
    -
    TO-252-2(DPAK)
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    1.5W
    100V
    8A
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD112T4G
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    100V
    20W
    GULL WING
    260
    2A
    40
    MJD112
    3
    R-PSSO-G2
    1
    NPN
    Single
    -
    COLLECTOR
    SWITCHING
    Halogen Free
    NPN - Darlington
    100V
    2A
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    25MHz
    2V
    100V
    25MHz
    100V
    5V
    2A
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD18002D2T4G
    LAST SHIPMENTS (Last Updated: 1 day ago)
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    450V
    50W
    GULL WING
    260
    2A
    40
    MJD18002
    3
    R-PSSO-G2
    1
    -
    Single
    50W
    COLLECTOR
    SWITCHING
    -
    NPN
    450V
    2A
    6 @ 1A 1V
    100μA
    750mV @ 200mA, 1A
    450V
    13MHz
    -
    450V
    -
    1kV
    11V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    Surface Mount
    Tin (Sn)
    FREE WHEELING DIODE
    13MHz
    Not Qualified
    13MHz
    NPN
    14
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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