ON Semiconductor MJD122T4G
- Part Number:
- MJD122T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462900-MJD122T4G
- Description:
- TRANS NPN DARL 100V 8A DPAK
- Datasheet:
- MJD122T4G
ON Semiconductor MJD122T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD122T4G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation1.75W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD122
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation20W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A 4V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Max Breakdown Voltage100V
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current8A
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD122T4G Description
The MJD122T4G is an 8A NPN bipolar power Darlington Transistor is designed for general-purpose amplifier and low-speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. It is the surface-mount replacement for the 2N6040 to 2N6045 series, TIP120 to TIP122 series, and TIP125 to TIP127 series.
MJD122T4G Features
Epoxy Meets UL 94 V?0 @ 0.125 in High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040?2N6045 Series, TIP120?TIP122 Series, and TIP125?TIP127 Series
Monolithic Construction With Built?in Base?Emitter Shunt Resistors
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
MJD122T4G Applications
General-purpose amplifier
Low-speed switching applications
The MJD122T4G is an 8A NPN bipolar power Darlington Transistor is designed for general-purpose amplifier and low-speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. It is the surface-mount replacement for the 2N6040 to 2N6045 series, TIP120 to TIP122 series, and TIP125 to TIP127 series.
MJD122T4G Features
Epoxy Meets UL 94 V?0 @ 0.125 in High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040?2N6045 Series, TIP120?TIP122 Series, and TIP125?TIP127 Series
Monolithic Construction With Built?in Base?Emitter Shunt Resistors
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
MJD122T4G Applications
General-purpose amplifier
Low-speed switching applications
MJD122T4G More Descriptions
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
ON Semi MJD122T4G NPN Darlington Transistor; 8 A 100 V HFE:100; 3-Pin DPAK
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
MJD122T4G ON Semiconductor Darlington Bipolar Transistors 8A 100V Power NPNDPAK RoHS
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL
Darlington Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
ON Semi MJD122T4G NPN Darlington Transistor; 8 A 100 V HFE:100; 3-Pin DPAK
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
MJD122T4G ON Semiconductor Darlington Bipolar Transistors 8A 100V Power NPNDPAK RoHS
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL
Darlington Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to MJD122T4G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)MountTerminal FinishAdditional FeatureFrequencyQualification StatusGain Bandwidth ProductPolarity/Channel TypehFE MinView Compare
-
MJD122T4GACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.75WGULL WING2608A40MJD1223R-PSSO-G21NPNSingle20WCOLLECTORSWITCHINGHalogen FreeNPN - Darlington100V8A1000 @ 4A 4V10μA4V @ 80mA, 8A100V4MHz2V100V4MHz100V5V8A2.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free------------
-
----TO-252-2(DPAK)----Tape & Reel (TR)------------------------NPN------------------RoHS Compliant-1.5W100V8A--------
-
ACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V20WGULL WING2602A40MJD1123R-PSSO-G21NPNSingle-COLLECTORSWITCHINGHalogen FreeNPN - Darlington100V2A1000 @ 2A 3V20μA3V @ 40mA, 4A100V25MHz2V100V25MHz100V5V2A2.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-----------
-
LAST SHIPMENTS (Last Updated: 1 day ago)--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)2EAR99Other Transistors450V50WGULL WING2602A40MJD180023R-PSSO-G21-Single50WCOLLECTORSWITCHING-NPN450V2A6 @ 1A 1V100μA750mV @ 200mA, 1A450V13MHz-450V-1kV11V------RoHS CompliantLead Free---Surface MountTin (Sn)FREE WHEELING DIODE13MHzNot Qualified13MHzNPN14
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361... -
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ.... -
22 November 2023
An Overview of 74HC373 Octal Transparent D Type Latch
Ⅰ. Overview of 74HC373Ⅱ. Manufacturer of 74HC373Ⅲ. Pin configuration and functions of 74HC373Ⅳ. What are the features of 74HC373?Ⅴ. Technical parameters of 74HC373Ⅵ. What are the applications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.