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MDI200-12A4

IXYS MDI200-12A4

Part Number:
MDI200-12A4
Manufacturer:
IXYS
Ventron No:
3587122-MDI200-12A4
Description:
MOD IGBT BUCK 1200V 270A Y3-DCB
ECAD Model:
Datasheet:
MDI200-12A4

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Specifications
IXYS MDI200-12A4 technical specifications, attributes, parameters and parts with similar specifications to IXYS MDI200-12A4.
  • Factory Lead Time
    32 Weeks
  • Mount
    Chassis Mount, Panel, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    Y3-DCB
  • Number of Pins
    7
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Published
    2000
  • Packaging
    Box
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    1.13kW
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Base Part Number
    MDD200
  • Pin Count
    7
  • JESD-30 Code
    R-XUFM-X5
  • Number of Elements
    1
  • Configuration
    Single
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    100 ns
  • Power - Max
    1130W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Turn-Off Delay Time
    650 ns
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    270A
  • Current - Collector Cutoff (Max)
    10mA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Input Capacitance
    11nF
  • Turn On Time
    150 ns
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 150A
  • Turn Off Time-Nom (toff)
    700 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    No
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    11nF @ 25V
  • VCEsat-Max
    3 V
  • Height
    30mm
  • Length
    110mm
  • Width
    62mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MDI200-12A4 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MDI200-12A4 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MDI200-12A4. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MDI200-12A4 More Descriptions
MDI200 Series 1200 Vce 270 A 100 ns t(on) IGBT Module
Trans IGBT Module N-CH 1.2KV 270A 7-Pin Y3-DCB
MOD IGBT BUCK 1200V 270A Y3-DCB
IGBT MOD 1200V 270A 1130W Y3DCB
Igbt, Module, N-Ch, 1.2Kv, 270A; Transistor Polarity:n Channel; Dc Collector Current:270A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:1.13Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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