GeneSiC Semiconductor MBRT12030R

Name: MBRT12030R
Brand: GeneSiC Semiconductor
SKU: 2418012-MBRT12030R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBRT12030R

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2418012-MBRT12030R

Description:: DIODE MODULE 30V 120A 3TOWER

ECAD Model:

Datasheet:: MBRT12030R

Specifications

GeneSiC Semiconductor MBRT12030R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBRT12030R.

Lifecycle Status
PRODUCTION (Last Updated: 4 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 60A
Case Connection
ISOLATED
Forward Current
120A
Max Reverse Leakage Current
1μA
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
30V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
30V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBRT12030R Overview
There is a maximum output voltage of 60A.As a general rule, surge currents should be monitored and kept below 800A.In operation, this device will be set to 120A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.

MBRT12030R Features
a maximum output voltage of 60A
a peak voltage of 1A
a reverse voltage peak of 1A

MBRT12030R Applications
There are a lot of GeneSiC Semiconductor
MBRT12030R applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBRT12030R More Descriptions

30V 120A Three Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 30V 60A 3TOWER
Schottky Rectifier, Comn And, 30V, 120A, 3-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):120A; Forward Voltage Vf Max:750Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:30V

Product Comparison

The three parts on the right have similar specifications to MBRT12030R.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Published

ECCN Code

HTS Code

Pitch

Orientation

Number of Contacts

Max Voltage Rating (DC)

Element Configuration

Operating Temperature - Junction

Number of Pins

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Forward Voltage

Max Forward Surge Current (Ifsm)

REACH SVHC

View Compare
MBRT12030R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 4 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

3

150°C

-40°C

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

750mV @ 60A

ISOLATED

120A

1μA

800A

60A

POWER

120A DC

30V

120A

1

1A

30V

1 Pair Common Anode

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBRT20080R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

3

150°C

-40°C

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

880mV @ 100A

ISOLATED

200A

1μA

1.5kA

100A

POWER

200A DC

80V

200A

1

1A

80V

1 Pair Common Anode

RoHS Compliant

2010

EAR99

8541.10.00.80

3mm

Straight

22

350.35kV

-

-

-

-

-

-

-

-

MBRT12030R vs MBRT20080R
MBRT20040

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

3

150°C

-40°C

UPPER

UNSPECIFIED

R-PUFM-X3

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

750mV @ 100A

ISOLATED

200A

1μA

1.5kA

100A

POWER

200A DC

40V

200A

1

1A

40V

1 Pair Common Cathode

RoHS Compliant

2010

EAR99

8541.10.00.80

-

-

-

-

Common Cathode

-55°C~150°C

-

-

-

-

-

-

MBRT12030R vs MBRT20040
MBRT30060

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Three Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

3

150°C

-40°C

UPPER

UNSPECIFIED

-

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

800mV @ 150A

ISOLATED

150A

1μA

2.5kA

-

POWER

300A DC

60V

300A

1

1A

60V

1 Pair Common Cathode

RoHS Compliant

2003

EAR99

8541.10.00.80

-

-

-

-

-

-

3

NOT SPECIFIED

NOT SPECIFIED

800mV

2.5kA

No SVHC

MBRT12030R vs MBRT30060