MBRD660CTG

ON Semiconductor MBRD660CTG

Part Number:
MBRD660CTG
Manufacturer:
ON Semiconductor
Ventron No:
3062716-MBRD660CTG
Description:
DIODE ARRAY SCHOTTKY 60V 3A DPAK
ECAD Model:
Datasheet:
MBRD660CTG

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Specifications
ON Semiconductor MBRD660CTG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRD660CTG.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    DPAK
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Voltage - Rated DC
    60V
  • Current Rating
    6A
  • Base Part Number
    MBRD660CT
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100μA @ 60V
  • Voltage - Forward (Vf) (Max) @ If
    700mV @ 3A
  • Forward Current
    6A
  • Operating Temperature - Junction
    -65°C~175°C
  • Halogen Free
    Halogen Free
  • Voltage - DC Reverse (Vr) (Max)
    60V
  • Breakdown Voltage
    60V
  • Current - Average Rectified (Io)
    3A
  • Forward Voltage
    900mV
  • Max Reverse Voltage (DC)
    60V
  • Average Rectified Current
    3A
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Peak Non-Repetitive Surge Current
    75A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    75A
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBRD660CTG Overview
In the case of 900mV forward voltage, the device will operate.In the case of 6A forward voltage, the device will operate.From the part, a current of 6A can be drawn.Powered by reverse voltage, this device has a peak voltage of 100μA.

MBRD660CTG Features
900mV forward voltage
a peak voltage of 100μA
a reverse voltage peak of 100μA


MBRD660CTG Applications
There are a lot of ON Semiconductor
MBRD660CTG applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBRD660CTG More Descriptions
ON Semi MBRD660CTG; Dual SMT Schottky Diode; Common Cathode; 60V 6A; 3-Pin D-PAK
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
MBRD660CT Series 6 A 60 V Schottky Rectifier Diode - TO-252-3
Rectifier Diode Schottky 60V 6A 3-Pin(2 Tab) DPAK Tube
Schottky Power Rectifier, Switch-mode, 6 A, 60 V
Diode Array 1 Pair Common Cathode Schottky 60V 3A Surface Mount TO-252-3, DPak (2 Leads Tab), SC-6
Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(Av):6A; Diode Configuration:dual Common Cathode; Diode Case Style:to-252 (Dpak); No. Of Pins:4Pins; Forward Voltage Vf Max:900Mv; Forward Surge Current Ifsm Max:75A Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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