GeneSiC Semiconductor MBR60080CTR

Name: MBR60080CTR
Brand: GeneSiC Semiconductor
SKU: 2417034-MBR60080CTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR60080CTR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2417034-MBR60080CTR

Description:: DIODE MODULE 80V 300A 2TOWER

ECAD Model:

Datasheet:: MBR60080CTR

Specifications

GeneSiC Semiconductor MBR60080CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR60080CTR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
880mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
80V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
80V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBR60080CTR Overview
The maximum output voltage is 300A.Keeping the surge current under 4kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 600A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.

MBR60080CTR Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A

MBR60080CTR Applications
There are a lot of GeneSiC Semiconductor
MBR60080CTR applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR60080CTR More Descriptions

80V 600A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 80V 300A 2TOWER
Schottky Rectifier, Comn And, 80V, 600A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):600A; Forward Voltage Vf Max:880Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V

Product Comparison

The three parts on the right have similar specifications to MBR60080CTR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Operating Temperature (Max)

Element Configuration

Operating Temperature - Junction

Non-rep Pk Forward Current-Max

Reverse Current-Max

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Diode Configuration:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io) (per Diode):

Published

View Compare
MBR60080CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

2

EAR99

150°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X2

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

880mV @ 300A

600A

1μA

4kA

300A

POWER

300A

80V

600A

1

1A

80V

1 Pair Common Anode

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBR600150CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

2

EAR99

-

-

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X2

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

3mA @ 150V

880mV @ 300A

-

-

-

-

POWER

-

150V

300A

1

-

-

1 Pair Common Anode

RoHS Compliant

150°C

Common Anode

-55°C~150°C

4000A

3000μA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR60080CTR vs MBR600150CTR
MBR6045WT

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

620mV @ 30A

45V

TO-247

Fast Recovery = 200mA (Io)

SWITCHMODE™

Tube

TO-247-3

-65°C ~ 175°C

Through Hole

Schottky

1 Pair Common Cathode

1mA @ 45V

30A

-

MBR60080CTR vs MBR6045WT
MBR60060CT

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

yes

Active

1 (Unlimited)

2

-

150°C

-40°C

-

UPPER

UNSPECIFIED

R-PUFM-X2

2

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

800mV @ 300A

600A

1μA

4kA

300A

POWER

300A

60V

600A

1

1A

60V

1 Pair Common Cathode

RoHS Compliant

-

Common Cathode

-50°C~150°C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2013

MBR60080CTR vs MBR60060CT