GeneSiC Semiconductor MBR60060CT
- Part Number:
- MBR60060CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2823437-MBR60060CT
- Description:
- DIODE MODULE 60V 300A 2TOWER
- Datasheet:
- MBR60060CT
GeneSiC Semiconductor MBR60060CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR60060CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr1mA @ 20V
- Voltage - Forward (Vf) (Max) @ If800mV @ 300A
- Forward Current600A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-50°C~150°C
- Max Surge Current4kA
- Output Current-Max300A
- ApplicationPOWER
- Current - Average Rectified (Io)300A
- Max Reverse Voltage (DC)60V
- Average Rectified Current600A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)60V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR60060CT Overview
A maximum output voltage of 300A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.The device operates when the forward voltage is set to 600A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBR60060CT Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR60060CT Applications
There are a lot of GeneSiC Semiconductor
MBR60060CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A maximum output voltage of 300A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.The device operates when the forward voltage is set to 600A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBR60060CT Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR60060CT Applications
There are a lot of GeneSiC Semiconductor
MBR60060CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR60060CT More Descriptions
60V 600A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE MOD SCHOTT 60V 300A 2TOWER
Schottky Rectifier, Comn Cthd, 60V, 600A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):600A; Forward Voltage Vf Max:800Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:60V
DIODE MOD SCHOTT 60V 300A 2TOWER
Schottky Rectifier, Comn Cthd, 60V, 600A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):600A; Forward Voltage Vf Max:800Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:60V
The three parts on the right have similar specifications to MBR60060CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusECCN CodeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):View Compare
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MBR60060CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2013yesActive1 (Unlimited)2150°C-40°CUPPERUNSPECIFIEDR-PUFM-X22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 20V800mV @ 300A600A1μA-50°C~150°C4kA300APOWER300A60V600A11A60V1 Pair Common CathodeRoHS Compliant---------------------
-
PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk-yesActive1 (Unlimited)2--UPPERUNSPECIFIEDR-PUFM-X22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 150V880mV @ 300A---55°C~150°C--POWER-150V300A1--1 Pair Common CathodeRoHS CompliantEAR998541.10.00.80NOT SPECIFIEDNOT SPECIFIED150°C4000A3000μA-------------
-
--Chassis MountChassis MountTwin TowerSILICONBulk--Obsolete1 (Unlimited)2--UPPERUNSPECIFIEDR-PUFM-X22Common AnodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 45V600mV @ 300A---55°C~150°C--POWER-45V300A1--1 Pair Common AnodeRoHS CompliantEAR998541.10.00.80--150°C4000A5000μA-------------
-
--------------------------------------------620mV @ 30A45VTO-247Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-247-3-65°C ~ 175°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V30A
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