MBR60060CT

GeneSiC Semiconductor MBR60060CT

Part Number:
MBR60060CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2823437-MBR60060CT
Description:
DIODE MODULE 60V 300A 2TOWER
ECAD Model:
Datasheet:
MBR60060CT

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Specifications
GeneSiC Semiconductor MBR60060CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR60060CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    800mV @ 300A
  • Forward Current
    600A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -50°C~150°C
  • Max Surge Current
    4kA
  • Output Current-Max
    300A
  • Application
    POWER
  • Current - Average Rectified (Io)
    300A
  • Max Reverse Voltage (DC)
    60V
  • Average Rectified Current
    600A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR60060CT Overview
A maximum output voltage of 300A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4kA.The device operates when the forward voltage is set to 600A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR60060CT Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR60060CT Applications
There are a lot of GeneSiC Semiconductor
MBR60060CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR60060CT More Descriptions
60V 600A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE MOD SCHOTT 60V 300A 2TOWER
Schottky Rectifier, Comn Cthd, 60V, 600A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):600A; Forward Voltage Vf Max:800Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:60V
Product Comparison
The three parts on the right have similar specifications to MBR60060CT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    ECCN Code
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Operating Temperature (Max)
    Non-rep Pk Forward Current-Max
    Reverse Current-Max
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR60060CT
    MBR60060CT
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2013
    yes
    Active
    1 (Unlimited)
    2
    150°C
    -40°C
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 20V
    800mV @ 300A
    600A
    1μA
    -50°C~150°C
    4kA
    300A
    POWER
    300A
    60V
    600A
    1
    1A
    60V
    1 Pair Common Cathode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR600150CT
    PRODUCTION (Last Updated: 5 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    -
    yes
    Active
    1 (Unlimited)
    2
    -
    -
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 150V
    880mV @ 300A
    -
    -
    -55°C~150°C
    -
    -
    POWER
    -
    150V
    300A
    1
    -
    -
    1 Pair Common Cathode
    RoHS Compliant
    EAR99
    8541.10.00.80
    NOT SPECIFIED
    NOT SPECIFIED
    150°C
    4000A
    3000μA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR60045CTRL
    -
    -
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    5mA @ 45V
    600mV @ 300A
    -
    -
    -55°C~150°C
    -
    -
    POWER
    -
    45V
    300A
    1
    -
    -
    1 Pair Common Anode
    RoHS Compliant
    EAR99
    8541.10.00.80
    -
    -
    150°C
    4000A
    5000μA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR6045WT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    620mV @ 30A
    45V
    TO-247
    Fast Recovery = 200mA (Io)
    SWITCHMODE™
    Tube
    TO-247-3
    -65°C ~ 175°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 45V
    30A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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