GeneSiC Semiconductor MBR600150CT
- Part Number:
- MBR600150CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 3063051-MBR600150CT
- Description:
- DIODE SCHOTTKY 150V 300A 2 TOWER
- ECAD Model:
-
- Datasheet:
- MBR600150CT
GeneSiC Semiconductor MBR600150CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR600150CT.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PUFM-X2
- Operating Temperature (Max)150°C
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 150V
- Voltage - Forward (Vf) (Max) @ If880mV @ 300A
- Operating Temperature - Junction-55°C~150°C
- ApplicationPOWER
- Max Reverse Voltage (DC)150V
- Average Rectified Current300A
- Number of Phases1
- Non-rep Pk Forward Current-Max4000A
- Diode Configuration1 Pair Common Cathode
- Reverse Current-Max3000μA
- RoHS StatusRoHS Compliant
MBR600150CT Overview
A forward voltage monitoring system should be used and the forward voltage should never exceed 3000μA.
MBR600150CT Features
a forward voltage of 3000μA
a forward voltage of 3000μA
MBR600150CT Applications
There are a lot of GeneSiC Semiconductor
MBR600150CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A forward voltage monitoring system should be used and the forward voltage should never exceed 3000μA.
MBR600150CT Features
a forward voltage of 3000μA
a forward voltage of 3000μA
MBR600150CT Applications
There are a lot of GeneSiC Semiconductor
MBR600150CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR600150CT More Descriptions
150V 600A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE SCHOTTKY 150V 300A 2 TOWER
DIODE MOD SCHOT 150V 300A 2TOWER
Schottky Rectifier, Module, 600A, 150V; Repetitive Peak Reverse Voltage:150V; Average Forward Current:600A; Forward Voltage Max:880Mv; Diode Module Configuration:Dual Common Cathode; Diode Case Style:Twin Tower; No. Of Pins:3Pins Rohs Compliant: Yes |Genesic Semiconductor MBR600150CT
DIODE SCHOTTKY 150V 300A 2 TOWER
DIODE MOD SCHOT 150V 300A 2TOWER
Schottky Rectifier, Module, 600A, 150V; Repetitive Peak Reverse Voltage:150V; Average Forward Current:600A; Forward Voltage Max:880Mv; Diode Module Configuration:Dual Common Cathode; Diode Case Style:Twin Tower; No. Of Pins:3Pins Rohs Compliant: Yes |Genesic Semiconductor MBR600150CT
The three parts on the right have similar specifications to MBR600150CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Number of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating Temperature - JunctionApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesNon-rep Pk Forward Current-MaxDiode ConfigurationReverse Current-MaxRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):PublishedMax Operating TemperatureMin Operating TemperatureForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxCurrent - Average Rectified (Io)Peak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)View Compare
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MBR600150CTPRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulkyesActive1 (Unlimited)2EAR998541.10.00.80UPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDR-PUFM-X2150°C2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 150V880mV @ 300A-55°C~150°CPOWER150V300A14000A1 Pair Common Cathode3000μARoHS Compliant------------------------ -
--Chassis MountChassis MountTwin TowerSILICONBulk-Obsolete1 (Unlimited)2EAR998541.10.00.80UPPERUNSPECIFIED--R-PUFM-X2150°C2Common AnodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 45V600mV @ 300A-55°C~150°CPOWER45V300A14000A1 Pair Common Anode5000μARoHS Compliant-----------------------
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----------------------------------620mV @ 30A45VTO-247Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-247-3-65°C ~ 175°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V30A----------
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PRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulkyesActive1 (Unlimited)2--UPPERUNSPECIFIED--R-PUFM-X2-2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 20V800mV @ 300A-50°C~150°CPOWER60V600A1-1 Pair Common Cathode-RoHS Compliant-------------2013150°C-40°C600A1μA4kA300A300A1A60V
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