GeneSiC Semiconductor MBR60060CTR

Name: MBR60060CTR
Brand: GeneSiC Semiconductor
SKU: 3552055-MBR60060CTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR60060CTR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 3552055-MBR60060CTR

Description:: DIODE MODULE 60V 300A 2TOWER

ECAD Model:

Datasheet:: MBR60060CTR

Specifications

GeneSiC Semiconductor MBR60060CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR60060CTR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 20V
Voltage - Forward (Vf) (Max) @ If
800mV @ 300A
Forward Current
600A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
4kA
Output Current-Max
300A
Application
POWER
Current - Average Rectified (Io)
300A
Max Reverse Voltage (DC)
60V
Average Rectified Current
600A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
60V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBR60060CTR Overview
300A is the maximum output voltage array can support.Array is important to monArrayor the surge current and make sure that Array does not exceed 4kA.In the case of 600A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.This semiconductor device's maximal reverse leakage current is 1μA kA, which is its reverse leakage current when reverse biased.

MBR60060CTR Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A

MBR60060CTR Applications
There are a lot of GeneSiC Semiconductor
MBR60060CTR applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR60060CTR More Descriptions

60V 600A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 60V 300A 2TOWER
SCHOTTKY RECTIFIER, COMN AND, 60V, 600A, 2-TOWER; Diode Module Configuration:1 Pair Common Anode; Forward Current If(AV):600A; Forward Voltage VF Max:800mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:60V

Product Comparison

The three parts on the right have similar specifications to MBR60060CTR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

ECCN Code

HTS Code

Operating Temperature (Max)

Non-rep Pk Forward Current-Max

Reverse Current-Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
MBR60060CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

2

150°C

-40°C

UPPER

UNSPECIFIED

R-PUFM-X2

2

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

800mV @ 300A

600A

1μA

-55°C~150°C

4kA

300A

POWER

300A

60V

600A

1

1A

60V

1 Pair Common Anode

RoHS Compliant

-

-

-

-

-

-

-

-
MBR600150CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

-

yes

Active

1 (Unlimited)

2

-

-

UPPER

UNSPECIFIED

R-PUFM-X2

2

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

3mA @ 150V

880mV @ 300A

-

-

-55°C~150°C

-

-

POWER

-

150V

300A

1

-

-

1 Pair Common Anode

RoHS Compliant

EAR99

8541.10.00.80

150°C

4000A

3000μA

-

-

MBR60060CTR vs MBR600150CTR
MBR600150CT

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

-

yes

Active

1 (Unlimited)

2

-

-

UPPER

UNSPECIFIED

R-PUFM-X2

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

3mA @ 150V

880mV @ 300A

-

-

-55°C~150°C

-

-

POWER

-

150V

300A

1

-

-

1 Pair Common Cathode

RoHS Compliant

EAR99

8541.10.00.80

150°C

4000A

3000μA

NOT SPECIFIED

NOT SPECIFIED

MBR60060CTR vs MBR600150CT
MBR60060CT

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

2

150°C

-40°C

UPPER

UNSPECIFIED

R-PUFM-X2

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 20V

800mV @ 300A

600A

1μA

-50°C~150°C

4kA

300A

POWER

300A

60V

600A

1

1A

60V

1 Pair Common Cathode

RoHS Compliant

-

-

-

-

-

-

-

MBR60060CTR vs MBR60060CT